SI4470EY-T1-E3 Siliconix / Vishay, SI4470EY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4470EY-T1-E3
• Description: N-CHANNEL, 60V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI4470EY-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71606
S09-1341-Rev. C, 13-Jul-09
0.020
0.015
0.010
0.005
0.000
100
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 5 A
0.2
On-Resistance vs. Drain Current
= 30 V
10
10
V
SD
Q
T
J
g
- Source-to-Drain Voltage (V)
V
= 150 °C
- Total Gate Charge (nC)
0.4
I
GS
D
- Drain Current (A)
Gate Charge
20
20
= 6 V
0.6
30
30
0.8
T
J
V
= 25 °C
40
40
GS
1.0
= 10 V
50
50
1.2
4000
3500
3000
2500
2000
1500
1000
0.10
0.08
0.06
0.04
0.02
0.00
500
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
0
- 50 - 25
0
0
C
rss
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
I
D
GS
= 5 A
C
= 10 V
oss
2
V
0
V
T
GS
15
DS
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
C
Capacitance
iss
4
50
30
Vishay Siliconix
75
I
D
6
= 5 A
100
Si4470EY
www.vishay.com
45
125
8
150
175
60
10
3