SI3469DV-T1-E3 Siliconix / Vishay, SI3469DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3469DV-T1-E3
• Description: P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI3469DV-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72676
S09-2110-Rev. B, 12-Oct-09
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10 -
- 25
Duty Cycle = 0.5
0.02
0.2
0.1
0.05
4
0
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
10 -
Single Pulse
= 250 µA
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10 -
0.1
Limited by R
2
* V
Limited
by I
125
GS
Single Pulse
D(on)
T
A
> minimum V
= 25 °C
150
V
DS
Square Wave Pulse Duration (s)
(DS)on
Safe Operating Area
-
Drain-to-Source Voltage (V )
Limited by BVDSS
1
10 -
*
1
GS
at which R
DS(on)
10
Limited by I
50
40
30
20
10
1
0
10 -
is specified
DC
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1, 10
3
DM
10 -
100
2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10 -
P
DM
JM
1
-
Time (s)
T
t
A
1
Vishay Siliconix
= P
t
1
2
DM
Z
thJA
thJA
100
Si3469DV
t
t
1
2
10
(t)
= 90 °C/W
www.vishay.com
100
600
600
4