SI3469DV-T1-E3 Siliconix / Vishay, SI3469DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3469DV-T1-E3
• Description: P-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Siliconix / Vishay

Specifications of SI3469DV-T1-E3

• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72676
S09-2110-Rev. B, 12-Oct-09
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
I
D
= 6.7 A
Source-Drain Diode Forward Voltage
0.2
V
On-Resistance vs. Drain Current
GS
5
4
V
= 4.5 V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
-
T
I
Total Gate Charge (nC)
J
D
= 150 °C
- Drain Current (A)
Gate Charge
10
8
0.6
V
DS
0.8
15
12
= 10 V
T
J
1.0
= 25 °C
V
GS
20
16
= 10 V
1.2
1.4
25
20
1500
1200
0.10
0.08
0.06
0.04
0.02
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
I
D
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
= 6.7 A
- 25
I
D
= 2 A
4
2
V
V
DS
T
GS
0
J
C
- Junction Temperature (°C)
rss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
4
8
C
50
I
C
D
Vishay Siliconix
oss
iss
= 6.7 A
V
GS
12
6
75
= 10 V
Si3469DV
www.vishay.com
100
16
8
125
150
20
10
3