NTE5414 NTE Electronics, Inc., NTE5414 Datasheet
NTE5414
Manufacturer Part Number
NTE5414
Description
SCR; TO-126; 25 A @ 1/2 Sine Wave, 60 Hz; 2.6 A; 2.2 V; 3 degC/W; 110 degC; -4
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5415.pdf
(3 pages)
Specifications of NTE5414
Current Squared Time Rating
2.6
Current, Forward
2.6 A
Current, Gate Trigger
200 uA (Max.) @ 12 V
Current, On-state, Average, Maximum
2.6 A
Current, Surge
25 A
Current, Surge, Peak
25 A @ 1⁄2 Sine Wave, 60 Hz
Package Type
TO-126
Primary Type
SCR
Resistance, Thermal, Junction To Case
3 °C/W
Temperature, Junction, Maximum
+110 °C
Temperature, Operating
-40 to +110 °C
Temperature, Operating, Maximum
110 °C
Temperature, Operating, Minimum
-40 °C
Thermal Resistance, Junction To Ambient
75 °C⁄W
Voltage, Drop, On-state, Maximum
2.2 V
Voltage, Forward
2.2 V
Voltage, Gate, Maximum
1 V
Voltage, Reverse
250 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5411 through NTE5416 are PNPN silicon controlled rectifier (SCR) devices designed for
high volume consumer applications such as temperature, light, and speed control: process and re-
mote control, and warning systems where reliability of operation is important.
Features:
D Passivated Surface for Reliability and Uniformity
D Power Rated at Economical Prices
D Practical Level Triggering and Holding Characteristics
Absolute Maximum Ratings: (T
Repetitive Peak Forward and Reverse Blocking Voltage, V
(1/2 Sine Wave, R
Non–Repetitive Peak Reverse Blocking Voltage , V
(1/2 Sine Wave, R
Average On–State Current, I
Surge On–State Current (T
Circuit Fusing (t = 8.3ms), I
Peak Gate Power (Pulse Width = 10 s, T
Note 1. Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias ap-
NTE5411
NTE5412
NTE5413
NTE5414
NTE5415
NTE5416
NTE5411
NTE5412
NTE5413
NTE5414
NTE5415
NTE5416
T
T
1/2 Sine wave, 60Hz
1/2 Sine wave, 1.5ms
C
C
plied to the gate concurrently with a negative potential on the anode. Devices should not
be tested with a constant current source for forward or reverse blocking capability such that
the voltage applied exceeds the rated blocking voltage.
= –40 to +110 C
= +100 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GK
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1000 , T
= 1000 , T
Silicon Controlled Rectifier (SCR)
C
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
T(AV)
= +90 C), I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5411 thru NTE5416
C
C
4 Amp, Sensitive Gate
C
= –40 to +110 C, Note 1)
= –40 to +110 C)
= +110 C unles otherwise specified)
TSM
C
= +90 C), P
RSM
GM
DRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
, V
RRM
2.6A
100V
200V
400V
600V
100V
100V
150V
250V
450V
650V
0.5W
2.6A
1.6A
30V
60V
25A
35A
2
s
Related parts for NTE5414
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Transistor; NPN; TO-220; 150 V; 150 V; 5 V; 8 A; 50 W; -65 to 150 degC; 40; PNP
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
NTE829, Integrated Circuit Electronics Attenuator, 90dB @ 1kHz
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener, 00.0V, 1W, DO-41; Voltage, Zener; Zener Impedance, Maximum
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
CIRCUIT; TO-220; 40V; 0.01 %/V (TYP.) LINE REGULATION; 18 MV%/VO (TYP.)
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3.5-32DC; Vol-Rtg 0-100DC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener; 12 V @ 21 mA; 1 W @ +50C; DO-41; 700 Ohms @ 0.25 mA; +200; -65
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3-32DC; Vol-Rtg 80-530AC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Specifications: Manufacturer: NTE ; RoHS: Details
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Rectifier, Bridge; Silicon Bridge Rectifier; 200 V; 400 A; 25; Thru Hole Mount
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE5414 Summary of contents
Page 1
... NTE5414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Absolute Maximum Ratings (Cont’d): (T Average Gate Power (t = 8.2ms, T Peak Forward Gate Current, I Peak Reverse Gate Voltage, V Operating Junction Temperature Range, T Storage Temperature Range, T Thermal Resistance, Junction–to–Case, R Thermal Resistance, Junction–to–Ambient, R Mounting ...
Page 3
Max .450 (11.4) Max .655 (16.6) Max K A .130 (3.3) Max .175 (4.45) Max .118 (3.0) Dia .030 (.762) Dia G .090 (2.28) ...