IRFB9N60APBF Vishay PCS, IRFB9N60APBF Datasheet
IRFB9N60APBF
Manufacturer Part Number
IRFB9N60APBF
Description
MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ohm; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V
Manufacturer
Vishay PCS
Datasheet
1.IRFB9N60APBF.pdf
(3 pages)
Specifications of IRFB9N60APBF
Current, Drain
9.2 A
Gate Charge, Total
49 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
170 W
Resistance, Drain To Source On
0.75 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
30 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
5.5 S
Voltage, Breakdown, Drain To Source
600 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB9N60APBF
Manufacturer:
STM
Quantity:
5 208
Part Number:
IRFB9N60APBF
Manufacturer:
IR
Quantity:
20 000
Benefits
Applicable Off Line SMPS Topologies:
Applications
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
dv/dt Ruggedness
Avalanche Voltage and Current
Drive Requirement
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
@T
Active Clamped Forward
Main Switch
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
600V
DSS
IRFB9N60APbF
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Rds(on) max
Max.
170
± 30
9.2
5.8
1.3
5.0
37
0.75Ω
®
Power MOSFET
G
D
S
PD - 94821
Units
9.2A
W/°C
V/ns
°C
I
W
A
V
D
1
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IRFB9N60APBF Summary of contents
Page 1
... T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torqe, 6- screw Applicable Off Line SMPS Topologies: Active Clamped Forward Main Switch SMPS MOSFET IRFB9N60APbF HEXFET V DSS 600V TO-220AB @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N• 94821 ® ...
Page 2
... IRFB9N60APbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...
Page 3
... IRFB9N60APbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH TO-220AB Part Marking Information ...