NTE5499 NTE Electronics, Inc., NTE5499 Datasheet

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NTE5499

Manufacturer Part Number
NTE5499
Description
SCR; TO-220; 7.6 A @ Half Cycle, 180 degConduction Angle, degC; 12 A; 3 K/W
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE5499

Current Squared Time Rating
72
Current, Forward
12 A
Current, Gate Trigger
10 mA (Max.)
Current, On-state, Average, Maximum
7.6 A @ Half Cycle, 180°Conduction Angle, +85°C
Current, On-state, Rms, Maximum
12 A
Package Type
TO-220
Power Dissipation
10 W
Primary Type
SCR
Resistance, Thermal, Junction To Case
3 K/W
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-40 to +125 °C
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Thermal Resistance, Junction To Ambient
60 K⁄W
Voltage, Drop, On-state, Maximum
1.8 V (Max.)
Voltage, Forward
1.8 V
Voltage, Gate, Maximum
2 V (Max.) (Trigger)
Voltage, Reverse
800 V
Voltage, Threshold
1 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (T
Peak Repetitive Off–State Voltage (T
RMS On–State Current (All Conduction Angles, T
Average On–State Current (Half Cycle, 180 Conduction Angle, T
Non–Repetitive On–State Current (Half Cycle, 60Hz), I
Non–Repetitive On–State Current (Half Cycle, 50Hz), I
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
Peak Gate Current (10 s Max), I
Peak Gate Dissipation (10 s Max), P
Average Gate Dissipation (20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Electrical Characteristics: (T
Off–State Leakage Current
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
Gate–Trigger Current
Gate–Trigger Voltage
NTE5498
NTE5499
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Controlled Rectifier (SCR)
Symbol
V
I
I
DRM
V
RRM
T(TO)
I
V
r
GT
stg
A
GT
T
T
GM
= +25 C unless otherwise specified)
,
A
NTE5498 & NTE5499
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
J
V
I
T
T
V
V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
J
J
DRM
D
D
= –40 to +125 C, R
= 24A, T
= +125 C
= +125 C
= 7V
= 7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
J
thJC
+ V
12 Amp
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
RRM
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
= +25 C
, R
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +85 C), I
GK
2
= 1k
TSM
TSM
t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1k ), V
T(RMS)
T
T
J
J
= +125 C
= +25 C
C
= +85 C), I
. . . . . . . . . . . . . . . . . . . . .
L
DRM
. . . . . . . . . . . . . . .
, V
Min Typ Max
5
T(AV)
RRM
–40 to +125 C
–40 to +125 C
. . . . . . . .
1.5
5.0
1.8
1.0
2.0
36
10
+250 C
60K/W
72A
3K/W
Unit
400V
800V
132A
120A
m
mA
mA
7.6A
10W
V
V
V
12A
1W
A
4A
2
s

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NTE5499 Summary of contents

Page 1

... Silicon Controlled Rectifier (SCR) Description: The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose high current applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T Peak Repetitive Off–State Voltage (T NTE5498 ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn–Off Time .147 (3.75) Dia Max .070 (1.78) Max = +25 C unless otherwise specified) A ...

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