IRF730APBF Vishay PCS, IRF730APBF Datasheet
IRF730APBF
Manufacturer Part Number
IRF730APBF
Description
MOSFET, Power; N-Ch; VDSS 400V; RDS(ON) 1Ohm; ID 5.5A; TO-220AB; PD 74W; VGS +/-30V; -55
Manufacturer
Vishay PCS
Datasheet
1.IRF730APBF.pdf
(3 pages)
Specifications of IRF730APBF
Current, Drain
5.5 A
Gate Charge, Total
22 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
74 W
Resistance, Drain To Source On
1 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
10 ns
Transconductance, Forward
3.1 S
Voltage, Breakdown, Drain To Source
400 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±30 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF730APBF
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
IRF730APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
l
l
l
l
l
l
l
l
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
STG
D
GS
J
@ T
@ T
Avalanche Voltage and Current
dv/dt Ruggedness
@T
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss Specified (See AN1001)
Single Transistor Forward Xfmr. Reset
Drive Requirement
Single Transistor Flyback Xfmr. Reset
C
C
C
= 25°C
= 100°C
= 25°C
(Both US Line input only).
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
400V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-220AB
Max.
± 30
5.5
3.5
0.6
4.6
22
74
1.0Ω
®
Power MOSFET
G
D
PD - 94976
S
Units
W/°C
5.5A
V/ns
°C
W
A
V
I
D
1
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IRF730APBF Summary of contents
Page 1
Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free l Low Gate Charge Qg results in Simple l Drive Requirement Improved Gate, Avalanche and dynamic l dv/dt Ruggedness Fully Characterized Capacitance and l ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
Page 3
NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION ...