SI1013R-T1-GE3 Siliconix / Vishay, SI1013R-T1-GE3 Datasheet
SI1013R-T1-GE3
Manufacturer Part Number
SI1013R-T1-GE3
Description
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ohm; ID -350mA; SC-75A (SOT-416); PD 150mW
Manufacturer
Siliconix / Vishay
Datasheet
1.SI1013R-T1-GE3.pdf
(2 pages)
Specifications of SI1013R-T1-GE3
Channel Type
P
Current, Drain
–0.35 A
Gate Charge, Total
1.5 nC
Package Type
SC-75A (SOT-416)
Polarization
P-Channel
Power Dissipation
0.15 W
Resistance, Drain To Source On
0.8 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
0.4 S
Voltage, Breakdown, Drain To Source
–20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-0.8 V
Voltage, Gate To Source
±6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1013R-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
Ordering Information:
Si1013R-T1-E3 (SC-75A, Lead (Pb)-free)
Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)
Si1013X-T1-E3 (SC-89, Lead (Pb)-free)
Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (diode conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
G
S
V
DS
- 20
1
2
SC-75A or SC-89
(V)
Top View
1.2 at V
1.6 at V
2.7 at V
a
R
3
DS(on)
GS
GS
GS
D
J
b
b
= - 4.5 V
= - 2.5 V
= - 1.8 V
= 150 °C)
for SC-75
for SC-89
(Ω)
SC-75A (SOT-416):
Si1013R - Marking Code D
SC-89 (SOT-490):
Si1013X - Marking Code B
P-Channel 1.8-V (G-S) MOSFET
b
b
I
D
- 350
- 300
- 150
A
(mA)
= 25 °C, unless otherwise noted
T
T
T
T
T
T
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free Option Available
• High-Side Switching
• Low On-Resistance: 1.2 Ω
• Low Threshold: 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• TrenchFET
• 2000 V ESD Protection
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
Symbol
T
Memories
J
ESD
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
stg
®
Power MOSFETs
- 400
- 300
- 275
175
275
160
5 s
90
- 55 to 150
- 1000
2000
- 20
± 6
Steady State
- 350
- 275
- 250
150
250
140
80
Vishay Siliconix
Si1013R/X
Unit
mW
mA
°C
V
V
RoHS
COMPLIANT
1
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SI1013R-T1-GE3 Summary of contents
Page 1
... Si1013R - Marking Code SC-89 (SOT-490): Si1013X - Marking Code B Top View Ordering Information: Si1013R-T1-E3 (SC-75A, Lead (Pb)-free) Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1013X-T1-E3 (SC-89, Lead (Pb)-free) Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° ...
Page 2
... Si1013R/X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage I Zero Gate Voltage Drain Current a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a Forward Transconductance a V Diode Forward Voltage b Dynamic Total Gate Charge ...