NTE222 NTE Electronics, Inc., NTE222 Datasheet - Page 2

• Manufacturer Part Number: NTE222
• Description: MOSFET; N-Ch; VDSS 25V; ID 50mA; 3-Pin Metal Case; PD 360mW; -65degc; +175degc
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE222

• Channel Type: N-Channel
• Current, Drain: 50 mA
• Operating And Storage Temperature: -65 to +175 °C
• Package Type: 3-Pin Metal Case
• Polarization: N-Channel
• Power Dissipation: 360 mW
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -65 °C
• Voltage, Breakdown, Drain To Source: 25 V
• Voltage, Drain To Gate: 30 V

Electrical Characteristics (Cont’d): (T
Note 4. G
Note 5. Amplitude at input from local oscillator is 3V RMS.
Small–Signal Characteristics (Cont’d)
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Functional Characteristics
Noise Figure
Common Source Power Gain
Bandwidth
Gain Contol Gate–Supply Voltage
Parameter
ps
is defined as the change in G
Symbol
V
Drain
GG(GC)
C
C
C
G
BW
NF
oss
iss
rss
(4.82)
(12.7)
ps
.190
.500
Min
.018 (0.45) Dia
A
45
= +25 C unless otherwise specified)
V
f = 1MHz
V
f = 1MHz
V
f = 1MHz
V
V
f = 200MHz
V
V
f = 200MHz
V
V
f
V
f = 200MHz, Note 4
RF
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
ps
= 200MHz, Note 5
= 15V, V
= 15V, V
= 15V, V
= 18V, V
= 15V, V
= 18V, V
= 15V, V
= 18V, V
= 18V, f
= 18V, G
from the value at V
.040 (1.02)
Test Conditions
LO
G2S
G2S
G2S
GG
G2S
GG
G2S
GG
ps
= 245MHz,
= 7V, f = 200MHz
= 7V, f = 200MHz
= 7V, f = 200MHz
= 4V, I
= 4V, I
= 4V, I
= 4V, I
= 4V, I
= 300dB,
Gate 2
Gate 1
Source/Case
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
D
D
D
D
D
= I
= 10mA,
= I
= 10mA,
= 10mA,
GG
DSS
DSS
= 7V.
,
,
0.005
Min
20
14
–
–
–
–
7
4
0
Typ
3.3
1.4
–
–
–
–
–
–
–
–
Max
0.03
–2.0
3.5
5.0
28
12
–
–
–
7
MHz
MHz
Unit
pF
pF
pF
dB
dB
dB
dB
V