VF30100S-E3/4W General Semiconductor / Vishay, VF30100S-E3/4W Datasheet
VF30100S-E3/4W
Specifications of VF30100S-E3/4W
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VF30100S-E3/4W Summary of contents
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... Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AB only) From terminal to heatsink min Operating junction and storage temperature range V30100S, VF30100S, VB30100S & VI30100S Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...
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... V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Breakdown voltage (1) Instantaneous forward voltage (2) Reverse current V R Notes: (1) Pulse test: 300 µs pulse width duty cycle (2) Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER SYMBOL Typical thermal resistance ORDERING INFORMATION (Example) ...
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... V30100S, VF30100S, VB30100S & VI30100S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...