NTE2716 NTE Electronics, Inc., NTE2716 Datasheet

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NTE2716

Manufacturer Part Number
NTE2716
Description
EPROM; 16K NMOS UV Erasable; 350 ns; 5.25 V (Max.); 5.25 V (Max.); 20 ns; DIP
Manufacturer
NTE Electronics, Inc.
Datasheet

Specifications of NTE2716

Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Operating
100 mA
Current, Output, Leakage
10
Current, Supply
100 mA (Max.) (Active)
Density
16K
Interface
Bus
Memory Type
UV EPROM
Organization
2K×8
Package Type
DIP
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
350 ns
Time, Address Hold
2
Time, Address Setup
2
Time, Fall
20 ns
Time, Input Rise And Fall
20 ns
Time, Rise
20 ns
Voltage, Input, High
6 V
Voltage, Input, High Level
2.0 V (Min.)
Voltage, Input, Low
0.8 V
Voltage, Input, Low Level
+0.8 V (Max.)
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.45 V
Voltage, Programmable
5.25 V (Max.)
Voltage, Supply
5 V
Access Time
350 ns
Description:
The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a
24–Lead DIP type package designed for system debug usage and similar applications requiring non-
volatile memory that could be reprogrammed periodically. The transparent lid on the package allows
the memory content to be erased with ultraviolet light.
The NTE2716 operates from a single power supply and has a static power down mode.
Features:
D Single 5V Power Supply
D Automatic Power–Down Mode (Standby)
D Organized as 2048 Bytes of 8Bits
D TTL Compatible During Read and Program
D Access Time: 350ns
D Output Enable Active Level is User Selectable
Absolute Maximum Ratings: (Note 1)
All Input or Output Voltages (with respect to V
V
Temperature Under Bias (V
Operating Temperature Range, T
Storage Temperature Range. T
Note 1. Permanent device may occur if “Absolute Maximum Ratings” are exceeded. Functional op-
Note 2. This device contains circuitry to protect the inputs against damage due to high static voltages
PP
Supply Voltage (with respect to V
eration should be restricted to “Recommended Operating Conditions”. Exposure to higher
than recommended voltages for extended periods of time could affect device reliability.
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high–impedance circuit.
NMOS, 16K UV Erasable PROM
PP
= 5V)
stg
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Integrated Circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SS
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2716
SS
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65 to +125 C
–10 to +80 C
+28 to –0.3V
+6 to –0.3V
0 to +70 C

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NTE2716 Summary of contents

Page 1

... NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit (2048 x 8–bit) Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring non- volatile memory that could be reprogrammed periodically. The transparent lid on the package allows the memory content to be erased with ultraviolet light ...

Page 2

Mode Selection: Mode 9–11, 13–17 DQ Read Data Out Output Disable High Z Standby High Z Program Data In Program Verify Data Out Program Inhibit High Z Note 3. In Read Mode Capacitance 1MHz, T ...

Page 3

AC Operating Conditions and Characteristics: Parameter Address Valid to Output Valid E/Progr to Output Valid Output Enable to Output Valid E/Progr to High Z Output Output Disable to High Z Output Data Hold from Address Note 6. Input Pulse Levels ...

Page 4

1.290 (32.76) Max 24 1 .280 (7.11) Dia UV Window Glass Sealant .160 (4.06) Max .100 (2.54) Pin Connection Diagram ...

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