NTE5455 NTE Electronics, Inc., NTE5455 Datasheet
NTE5455
Manufacturer Part Number
NTE5455
Description
SCR; TO-202; 200 V; 20; 4 A; 2.2 V @ 25 degC; 5 degC/W; 50 uA (Typ.); 100 degC
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5457.pdf
(2 pages)
Specifications of NTE5455
Current Squared Time Rating
0.5
Current, Forward
4 A
Current, Gate Trigger
50 uA (Typ.)
Current, On-state, Rms, Maximum
4 A
Current, Reverse
100 μA
Current, Surge
20 A
Current, Surge, Peak
20
Package Type
TO-202
Power Dissipation
200 mW
Primary Type
SCR
Resistance, Thermal, Junction To Case
+5 °C/W
Temperature, Junction, Maximum
+100 °C
Temperature, Operating
-40 to +100 °C
Temperature, Operating, Maximum
150 °C
Temperature, Operating, Minimum
-40 °C
Voltage, Drop, On-state, Maximum
2.2 V @ 25°C
Voltage, Forward
2.2 V
Voltage, Gate, Maximum
0.8 V
Voltage, Reverse
200 V
Voltage, Reverse, Peak, Maximum
200 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed
to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be
switched from off–state to conduction by a current pulse applied to the gate terminal. They are de-
signed for control applications in lighting, heating, cooling, and static switching relays.
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (T
Repetitive Peak Off–State Voltage (T
RMS On–State Current, I
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), I
Peak Gate–Trigger Current (3 s Max), I
Peak Gate–Power Dissipation (I
Average Gate Power Dissipation, P
Operating Temperature Range, T
Storage Temperature Range, T
Typical Thermal Resistance, Junction–to–Case, R
NTE5452
NTE5453
NTE5454
NTE5455
NTE5456
NTE5457
NTE5458
NTE5452
NTE5453
NTE5454
NTE5455
NTE5456
NTE5457
NTE5458
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Silicon Controlled Rectifier (SCR)
T(RMS)
stg
GT
NTE5452 thru NTE5458
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
opr
4 Amp Sensitive Gate
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
C
C
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GTM
= +100 C), V
= +100 C), V
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
for 3 s Max), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
RRM
DRXM
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GM
. . . . . . . . . . . . . . . . . . . . . . . . . . .
TSM
. . . . . . . . . . .
–40 to +100 C
–40 to +150 C
+5 C/W
200mW
100V
200V
300V
400V
600V
100V
200V
300V
400V
600V
20W
30V
50V
30V
50V
20A
4A
1A
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NTE5455 Summary of contents
Page 1
... NTE5455 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics: Parameter Peak Off–State Current Maximum On–State Voltage DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage Total Gate Controlled Turn–On Time for Fusing Reference Critical rate of Applied Forward Voltage 1.200 (30.48) Ref .100 (2.54) ...