MT47H256M4HQ-25E:E TR Micron Technology Inc, MT47H256M4HQ-25E:E TR Datasheet - Page 33
MT47H256M4HQ-25E:E TR
Manufacturer Part Number
MT47H256M4HQ-25E:E TR
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H256M4HQ-25EE_TR.pdf
(135 pages)
Specifications of MT47H256M4HQ-25E:E TR
Organization
256Mx4
Density
1Gb
Address Bus
17b
Access Time (max)
400ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
145mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VddQ = +1.8V ±0.1V, Vdd = +1.8V ±0.1V
DQS rising edge to
CK rising edge
DQS input-high
pulse width
DQS input-low
pulse width
DQS falling to CK
rising: setup time
DQS falling from
CK
rising: hold time
Write preamble
setup time
DQS write
preamble
DQS write
postamble
WRITE command
to first DQS transi-
tion
Parameter
AC Characteristics
Symbol
t
t
WPRES
t
t
t
t
DQSH
WPRE
t
WPST
DQSS
DQSL
t
DSH
DSS
–
Min
-187E
Max
Min
-25E
Max
Min
-25
Max
MAX = WL +
MAX = +0.25 ×
MIN = –0.25 ×
MIN = WL -
MIN = 0.35 ×
MIN = 0.35 ×
MIN = 0.35 ×
MAX = 0.6 ×
MIN = 0.2 ×
MIN = 0.2 ×
MIN = 0.4 ×
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
MAX = n/a
Min
MIN = 0
-3E
Max
t
DQSS
t
DQSS
t
t
t
t
t
t
CK
CK
t
CK
CK
t
CK
CK
CK
CK
t
CK
Min
-3
Max
Min
-37E
Max
Min
-5E
Max
Units Notes
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
ps
CK
CK
CK
23, 24
18, 25
18
18
18
18
18
18
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