RMB4S/45 Vishay, RMB4S/45 Datasheet - Page 3
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RMB4S/45
Manufacturer Part Number
RMB4S/45
Description
Manufacturer
Vishay
Datasheet
1.RMB4S45.pdf
(4 pages)
Specifications of RMB4S/45
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
400V
Rms Voltage (max)
280V
Peak Non-repetitive Surge Current (max)
30A
Avg. Forward Curr (max)
0.8@Ta=30CA
Rev Curr
5uA
Forward Voltage
1.25V
Package Type
TO-269AA
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Surface Mount
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Not Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88705
Revision: 01-Feb-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
0.114 (2.90)
0.094 (2.40)
T
J
0.7
= 150 °C
T
0.106 (2.70)
0.090 (2.30)
0.144 (3.65)
J
0.161 (4.10)
40
= 125 °C
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For technical questions within your region, please contact one of the following:
0.9
T
0.029 (0.74)
0.017 (0.43)
J
60
= 25 °C
T
J
1.1
= 25 °C
0.095 (2.41)
0.195 (4.95)
0.105 (2.67)
0.179 (4.55)
80
1.3
TO-269AA (MBS)
0.0075 (0.19)
0.0065 (0.16)
0.038 (0.96)
0.019 (0.48)
0.272 (6.90)
0.252 (6.40)
100
1.5
0 to 8°
0.058 (1.47)
0.054 (1.37)
0.195 (4.95)
0.008 (0.20)
0.004 (0.10)
0.114 (2.90)
0.110 (2.80)
0.205 (5.21)
0.016 (0.41)
0.006 (0.15)
0.018 (0.46)
0.014 (0.36)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.058 (1.47)
30
25
20
15
10
5
0
Figure 5. Typical Junction Capacitance Per Diode
0.1
(0.58 MIN.)
Vishay General Semiconductor
0.023 MIN.
(0.76 MIN.)
0.030 MIN.
Mounting Pad Layout
1
Reverse Voltage (V)
0.105 (2.67)
0.095 (2.41)
RMB2S & RMB4S
10
0.272 MAX.
(6.91 MAX.)
T
f = 1.0 MHz
V
J
sig
= 25 °C
100
= 50 mVp-p
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1000
3