MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 70

• Manufacturer Part Number: MT41J256M8DA-125:H
• Manufacturer: Micron Technology Inc

Specifications of MT41J256M8DA-125:H

• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 49: Differential Output Driver Characteristics
All voltages are referenced to V
Figure 28: DQ Output Signal
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
Parameter/Condition
Output leakage current: DQ are disabled; 0V ≤ V
V
Output slew rate: Differential; For rising and falling
edges, measure between V
V
Output differential cross-point voltage
Differential high-level output voltage
Differential low-level output voltage
Delta Ron between pull-up and pull-down for DQ/DQS
Test load for AC timing and output slew rates
DDQ
OH,diff(AC)
; ODT is disabled; ODT is HIGH
= +0.2 × V
DDQ
Notes:
OL,diff(AC)
1. RZQ of 240Ω (±1%) with RZQ/7 enabled (default 34Ω driver) and is applicable after prop-
2. V
3. See Figure 30 (page 71) for the test load configuration.
4. See Table 51 (page 73) for the output slew rate.
5. See Table 38 (page 64) for additional information.
6. See Figure 29 (page 71) for an example of a differential output signal.
SS
er ZQ calibration has been performed at a stable temperature and voltage (V
V
SSQ
REF
= –0.2 × V
= V
= V
DDQ
SS
).
/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
DDQ
OUT
and
Output Characteristics and Operating Conditions
≤
70
V
V
Symbol
MM
SRQdiff
OH,diff(AC)
V
OL,diff(AC)
OX(AC)
I
OZ
Output to V
PUPD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
MAX output
V
MIN output
OL(AC)
OH(AC)
V
TT
2Gb: x4, x8, x16 DDR3 SDRAM
REF
(V
Min
–10
–5
5
DDQ
- 150
+0.2 × V
–0.2 × V
/2) via 25Ω resistor
V
DDQ
DDQ
REF
© 2006 Micron Technology, Inc. All rights reserved.
Max
+10
+5
12
+ 150
Units
V/ns
mV
µA
%
V
V
DDQ
Notes
1, 2, 3
= V
1, 4
1, 4
1, 5
1
1
3
DD
,