MT41J256M8DA-125:H Micron Technology Inc, MT41J256M8DA-125:H Datasheet - Page 61
MT41J256M8DA-125:H
Manufacturer Part Number
MT41J256M8DA-125:H
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT41J256M8DA-125H.pdf
(210 pages)
Specifications of MT41J256M8DA-125:H
Lead Free Status / Rohs Status
Supplier Unconfirmed
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Figure 24:
Figure 25:
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
t AONPD
Begin point: Rising edge of CK - CK#
with ODT first registered high
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
t
t AON
t
AON and
AONPD and
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL on
t
AOF Definitions
V
V
SSQ
SSQ
t
AOFPD Definitions
T
t AON
T
SW1
t AONPD
SW1
End point: Extrapolated point at V
T
End point: Extrapolated point at V
SW2
T
SW2
V
CK
CK#
SW1
V
CK
CK#
SW1
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered low
t AOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL off
V
V
SW2
SW2
61
V
SW2
V
SW2
SSQ
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SSQ
V
SW1
V
2Gb: x4, x8, x16 DDR3 SDRAM
SW1
t AOF
t AOFPD
End point: Extrapolated point at V
End point: Extrapolated point at V
T
T
SW2
SW1
T
SW1
T
SW1
ODT Characteristics
© 2006 Micron Technology, Inc. All rights reserved.
V
V
RTT,nom
RTT,nom
V
DDQ
V
V
V
DDQ
SSQ
SSQ
/2
/2
RTT,nom
RTT,nom
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