MT46H32M16LFCK-75TR Micron Technology Inc, MT46H32M16LFCK-75TR Datasheet - Page 85
MT46H32M16LFCK-75TR
Manufacturer Part Number
MT46H32M16LFCK-75TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H32M16LFCK-75TR.pdf
(98 pages)
Specifications of MT46H32M16LFCK-75TR
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 45: Bank Read – With Auto Precharge
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Case 1:
Case 2:
Command
BA0, BA1
Address
DQ
DQ
DQS
DQS
t
t
CK#
CKE
A10
DM
AC (MIN) and
AC (MAX) and
CK
4,5
4,5
4
4
t
t
IS
IS
NOP
T0
t
DQSCK (MIN)
t
t
DQSCK (MAX)
1
t
IH
IH
Notes:
Bank x
ACTIVE
t
t
IS
IS
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. Refer to Figure 30 (page 68) and Figure 31 (page 69) for detailed DQS and DQ timing.
5. D
t
t
IH
IH
t
CK
these times.
OUT
t
t
RAS
RCD
t
RC
n = data-out from column n.
NOP
T2
1
t
CH
t
CL
t
t
Note 3
Bank x
READ
IS
LZ (MIN)
Col n
T3
t
2
IH
85
t
CL = 2
RPRE
t
t
LZ (MIN)
AC (MIN)
512Mb: x16, x32 Mobile LPDDR SDRAM
NOP
T4
1
t
AC (MAX)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
D
RPRE
OUT
t
DQSCK (MIN)
NOP
D
T5
D
OUT
OUT
t
DQSCK (MAX)
1
T5n
D
D
OUT
OUT
t
RP
NOP
D
T6
t
OUT
D
RPST
OUT
1
Don’t Care
© 2004 Micron Technology, Inc. All rights reserved.
t
T6n
HZ (MAX)
D
t
RPST
OUT
Auto Precharge
NOP
T7
1
Transitioning Data
ACTIVE
Bank x
Row
Row
T8
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