MT47H32M16BN-37E:D Micron Technology Inc, MT47H32M16BN-37E:D Datasheet - Page 106
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MT47H32M16BN-37E:D
Manufacturer Part Number
MT47H32M16BN-37E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16BN-37ED.pdf
(139 pages)
Specifications of MT47H32M16BN-37E:D
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
205mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16BN-37E:D
Manufacturer:
MICRON
Quantity:
489
Company:
Part Number:
MT47H32M16BN-37E:D
Manufacturer:
MICRON
Quantity:
319
Company:
Part Number:
MT47H32M16BN-37E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 56: Bank Read – with Auto Precharge
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Bank address
Command 1
DQS, DQS#
DQS, DQS#
Case 2: t AC (MAX) and t DQSCK (MAX)
Case 1: t AC (MIN) and t DQSCK (MIN)
Address
DQ 6
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4, RL = 4 (AL = 1, CL = 3) in the case shown.
3. The DDR2 SDRAM internally delays auto precharge until both
4. Enable auto precharge.
5. I/O balls, when entering or exiting High-Z, are not referenced to a specific voltage level,
6. DO n = data-out from column n; subsequent elements are applied in the programmed
t CK
these times.
have been satisfied.
but to when the device begins to drive or no longer drives, respectively.
order.
t RCD
t RAS
t RC
NOP 1
T2
t CH
t CL
READ 2,3
Bank x
Col n
4
T3
AL = 1
prefetch
4-bit
106
NOP 1
T4
t RTP
NOP 1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
t LZ (MIN)
t LZ (MAX)
CL = 3
512Mb: x4, x8, x16 DDR2 SDRAM
Internal
precharge
5
NOP 1
T6
5
t RPRE
t LZ (MIN)
t LZ (MAX)
t RPRE
NOP 1
Transitioning Data
T7
t DQSCK (MIN)
t RP
DO
t DQSCK (MAX)
t AC (MIN)
n
t AC (MAX)
DO
© 2004 Micron Technology, Inc. All rights reserved.
n
T7n
t
RAS (MIN) and
NOP 1
T8
t HZ (MIN)
t HZ (MAX)
T8n
t RPST
t RPST
Don’t Care
Bank x
ACT
RA
5
RA
t
RTP (MIN)
5
READ