ZEN098V230A16LS TE Connectivity, ZEN098V230A16LS Datasheet - Page 3

• Manufacturer Part Number: ZEN098V230A16LS
• Description: ZENER DIODE, 9.8V
• Manufacturer: TE Connectivity
• Type: Polymer Enhanced Zener Diode Microassemblyr

Specifications of ZEN098V230A16LS

• Zener Voltage Vz Typ: 9.8V
• Diode Case Style: Module
• No. Of Pins: 3
• Rohs Compliant: Yes
• Product Category: Circuit Protection Devices - Passive
• Product Classification: Hybrid Devices
• Product Type: PolyZen
• Vz - Minimal (v): 9.6
• Vz - Typical (v): 9.8
• Vz - Maximum (v): 10
• Izt (a): 0.1
• Ihold @ 20°c (a): 2.3
• Rtyp (?): 0.04
• R1max (?): 0.06
• Vint Max (v): 16
• Vint Max Test Current (a): 5
• Iflt Max (a): +2.5/-40
• Iflt Max Test Voltage (v): +20/-12V
• Construction: Surface Mount
• Rohs/elv Compliance: RoHS compliant, ELV compliant
• Lead Free Solder Processes: Reflow solder capable to 245°C, Reflow solder capable to 260°C
• Rohs/elv Compliance History: Always was RoHS compliant

Min
9.6
GENERAL SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
MECHANICAL DIMENSIONS
SOLDER REFLOW RECOMMENDATIONS:
Typ
9.8
V
(V)
Z
4
Electrical characteristics determined at 25ºC unless otherwise specified.
This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device and
may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact, TE
Connectivity Circuit Protection Division directly.
Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
I
I
specified temperature. Specification assumes I
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
R Typ: Resistance between V
R
soldering.
V
voltage (V
24 hours trip endurance at the specified voltage (V
load (V
I
prior to a trip event. I
100 test cycles. RMS fault current above I
conducted with NO load connected to V
includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through the diode. I
survivability rating, not a performance rating.
zt
HOLD
FLT
INT
1Max
is the current at which V
10.0
Max
Max: I
Max: V
: Maximum steady state I
: The maximum resistance between V
OUT
FLT
(A)
0.1
I
IN
= 0 V). V
zt
INT
-V
4
Max relates to the steady state current flowing through the diode portion of the PolyZen device in a fault condition,
Max relates to the voltage across the PPTC portion of the PolyZen device (V
OUT
@
I
HOLD
) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and
20ºC
(A)
2.3
INT
FLT
5
Max is a survivability rating, not a performance rating.
Max is defined as the current at which typical qualification devices (12 parts per lot from 3 lots) survived
Voltage
Leakage Current
z
Test
is measured (V
9.5
IN
PTC
Polymer Enhanced Zener Diode
and V
(current entering or exiting the V
Operating Temperature
Storage Temperature
Current
OUT
(mA)
1-3, 11
Max
5.0
Micro-Assemblies
OUT
pins during normal operation at room temperature.
FLT
, such that I
PolyZen
Z
IN
= V
Max may permanently damage the diode portion of the PolyZen device. Testing is
and V
(Typical unless otherwise specified)
FLT
(Ohms)
R Typ
OUT
Length
Height
0.04
Diode
Diode
Length
Height
(current flowing through the Zener diode) is sufficiently low so as to prevent
Offset
Offset
Width
IN
OUT
). Additional V
-V
6
OUT
OUT
pins at room temperature, one hour after 1
) and current (I
= 0. “Test voltage” is defined as the voltage between V
(Ohms)
R
0.06
1Max
Hd
O1
O2
Ld
W
H
L
7
Z
-40º to +85ºC
-40º to +85ºC
IN
values are available on request.
pin of the device) that will not generate a trip event at the
V
INT
16V
(V)
3.85 mm
3.85 mm
PTC
(0.152”)
(0.152”)
(0.055”)
1.4mm
Max
Min
V
). V
-
-
-
-
Int
(V)
Max
REV LETTER: B
REV DATE: MAY 9, 2011
DOCUMENT: SCD27861
PAGE NO.: 3 OF 8
INT
PRODUCT: ZEN098V230A16LS
Current
Max testing is conducted using a "shorted"
Test
8
(A)
5A
(0.067”)
(0.118”)
(0.039”)
(0.024”)
(0.028”)
1.7 mm
3.0 mm
1.0 mm
0.6 mm
0.7 mm
Typical
(0.16”)
(0.16”)
4 mm
4 mm
IN
-V
Max
+3.5
I
(A)
-40
FLT
OUT
I
FLT
st
). V
4.15 mm
4.15 mm
(0.163")
(0.163")
(0.081”)
2.0 mm
Max
trip or after reflow
Voltage
Max
INT
Test
-
-
-
-
+16
(V)
-12
9
Max is defined as the
FLT
Value
Tripped Power
Dissipation
(W)
1.0
IN
Max is a
to GND and
Max
Voltage
Test
(V)
16
10