MCP14E8-E/P Microchip Technology, MCP14E8-E/P Datasheet - Page 5

• Manufacturer Part Number: MCP14E8-E/P
• Description: 3A MOSFET Driver 8 PDIP .300in TUBE
• Manufacturer: Microchip Technology

Specifications of MCP14E8-E/P

• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• Module Configuration: Low Side
• Peak Output Current: 2A
• Output Resistance: 5ohm
• Input Delay: 45ns
• Output Delay: 45ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: DIP
• No. Of Pins: 8

DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE)
TEMPERATURE CHARACTERISTICS
© 2011 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Propagation Delay Time
Propagation Delay Time
Power Supply
Supply Voltage
Supply Current
Note 1:
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
2:
Parameters
Switching times are ensured by design.
Tested during characterization, not production tested.
Parameters
V
V
R
V
Sym
V
EN_H
HYST
ENBL
I
I
I
I
I
I
I
I
EN_L
t
t
DD
DD
DD
DD
DD
DD
DD
DD
D3
D4
DD
Sym
θ
θ
θ
T
T
T
JA
JA
JA
A
A
J
Min
2.4
0.7
4.5
—
—
—
—
—
—
—
—
—
—
—
—
Min
-40
-65
—
—
—
—
1400
1300
1300
149.5
Typ
800
800
500
600
600
0.4
1.6
35.7
89.3
60
70
—
—
—
Typ
—
—
—
2200
2000
2000
1200
1100
Max
18.0
600
900
900
0.8
3.0
—
—
80
85
+125
+150
+150
Max
—
—
—
Units
MΩ
µA
µA
µA
µA
µA
µA
µA
µA
ns
ns
V
V
V
V
Units
°C/W
°C/W
°C/W
°C
°C
°C
MCP14E6/7/8
V
V
V
ENB_A = ENB_B = GND
V
V
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = High
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
V
ENB_A = ENB_B = Low
DD
DD
DD
DD
DD
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
IN_A
(2)
Typical four-layer board with
vias to ground plane
DD
= 12V, Low-to-High Transition
= 12V, High-to-Low Transition
= 14V,
= 12V,
= 12V,
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
= 3V, V
= 0V, V
≤ 18V.
(CONTINUED)
Conditions
Figure 4-3
Figure 4-3
Conditions
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
IN_B
DD
DS25006A-page 5
≤ 18V.
= 3V,
= 0V,
= 0V,
= 3V,
= 3V,
= 0V,
= 0V,
= 3V,