MCP14E8-E/P Microchip Technology, MCP14E8-E/P Datasheet - Page 14

• Manufacturer Part Number: MCP14E8-E/P
• Description: 3A MOSFET Driver 8 PDIP .300in TUBE
• Manufacturer: Microchip Technology

Specifications of MCP14E8-E/P

• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• Module Configuration: Low Side
• Peak Output Current: 2A
• Output Resistance: 5ohm
• Input Delay: 45ns
• Output Delay: 45ns
• Supply Voltage Range: 4.5V To 18V
• Driver Case Style: DIP
• No. Of Pins: 8

MCP14E6/7/8
TABLE 4-1:
FIGURE 4-3:
4.4
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge capaci-
tive loads quickly. For example, approximately 1.8A
are needed to charge a 1000 pF load with 18V in 10 ns.
To operate the MOSFET driver over a wide frequency
range, with low supply impedance, a ceramic and low-
ESR film capacitors are recommended to be placed in
parallel between the driver, V
low-ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins, 6 and 3, should be used. These
capacitors should be placed close to the driver to mini-
mize the circuit board parasitics and provide a local
source for the required current.
DS25006A-page 14
ENB_A
5V
ENB_x
0V
V
OUT x
0V
DD
H
H
H
H
L
Decoupling Capacitors
ENB_B
H
H
H
H
L
ENABLE PIN LOGIC
V
EN_H
10%
t
Enable Timing Waveform.
D3
IN A
V
H
H
X
L
L
EN_L
DD
t
D4
90%
and GND. A 1.0 µF
IN B
H
H
X
L
L
OUT A
H
H
L
L
L
MCP14E6
OUT B
4.5
Proper PCB layout is important in a high-current, fast
switching circuit to provide proper device operation and
robustness to the design. The PCB trace loop area and
inductance should be minimized by the use of ground
planes or trace under MOSFET gate drive signals, sep-
arate analog and power grounds, and local driver
decoupling.
Placing a ground plane beneath the MCP14E6/7/8 will
help as a radiated noise shield, as well as providing
some heat sinking for power dissipated within the
device.
4.6
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements
EQUATION 4-1:
4.6.1
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
EQUATION 4-2:
H
H
L
L
L
Where:
Where:
P
P
CC
P
P
V
Q
PCB Layout Considerations
Power Dissipation
T
L
OUT A
(Figure
C
DD
T
CAPACITIVE LOAD DISSIPATION
f = Switching frequency
H
H
L
L
L
=
=
=
=
MCP14E7
P
P
= Total load capacitance
= MOSFET driver supply voltage
T
L
Total Power Dissipation
Load Power Dissipation
Quiesent Power Dissipation
Operating Power Dissipation
4-1).
=
=
OUT B
P
f
L
© 2011 Microchip Technology Inc.
H
H
×
L
L
L
+
C
P
T
Q
×
+
V
OUT A
P
DD
H
H
L
L
L
CC
MCP14E8
2
OUT B
H
H
L
L
L