2N4401RLRM ON Semiconductor, 2N4401RLRM Datasheet - Page 4

• Manufacturer Part Number: 2N4401RLRM
• Description: TRANS SS NPN GP 40V 600MA TO-92
• Manufacturer: ON Semiconductor

Specifications of 2N4401RLRM

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

100
300
200
100
7.0
8.0
6.0
4.0
2.0
5.0
70
50
30
20
10
70
50
30
10
0
0.01 0.02 0.05
10
10
20
20
I
I
I
I
C
C
C
C
Figure 9. Frequency Effects
= 500 mA, R
= 100 mA, R
= 50 mA, R
0.1
= 1.0 mA, R
I
Figure 5. Turn−On Time
I
30
C
30
C
Figure 7. Storage Time
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
0.2
f, FREQUENCY (kHz)
50
S
50
0.5
S
S
S
= 4.0 kW
= 150 W
= 200 W
= 2.0 kW
1.0
70
70
2.0 5.0
100
100
t
t
t
t
r
r
d
d
V
@ V
@ V
SMALL−SIGNAL CHARACTERISTICS
@ V
@ V
t
I
I
CE
s
B1
C
R
RS =
RS =
′ = t
/I
S
CC
CC
B
= I
10
EB
EB
200
200
= OPTIMUM
= 10 Vdc, T
I
= 10 to 20
C
s
B2
= 30 V
= 10 V
SOURCE
RESISTANCE
= 2.0 V
= 0
/I
− 1/8 t
B
20
= 10
300
300
f
http://onsemi.com
50
NOISE FIGURE
500
A
500
100
2N4401
= 25°C; Bandwidth = 1.0 Hz
4
100
8.0
6.0
4.0
2.0
100
7.0
7.0
10
5.0
5.0
70
50
30
20
10
70
50
30
20
10
0
50
10
10
100 200
Figure 10. Source Resistance Effects
f = 1.0 kHz
20
20
t
f
Figure 6. Rise and Fall Times
I
I
I
I
C
C
C
C
R
I
C
S
= 50 mA
= 100 mA
= 500 mA
= 1.0 mA
I
I
30
30
C
/I
C
, SOURCE RESISTANCE (OHMS)
500 1.0 k 2.0 k
t
r
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
B
Figure 8. Fall Time
= 10
50
50
I
C
/I
70
70 100
B
= 20
100
5.0 k 10 k 20 k
200
V
I
200
C
V
I
B1
CC
/I
CC
B
= I
= 30 V
= 10
= 30 V
B2
300
300
50 k
100 k
500
500