MPS6717 ON Semiconductor, MPS6717 Datasheet - Page 2

• Manufacturer Part Number: MPS6717
• Description: TRANS NPN SS GP 80V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS6717

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 10mA, 250mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 250mA, 1V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MPS6717OS

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Collector−Base Capacitance
Small−Signal Current Gain
400
200
100
80
60
40
0.5
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(I
C
C
E
C
C
C
C
C
CB
EB
CB
0.7
= 10 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 50 mAdc, V
= 250 mAdc, V
= 250 mAdc, I
= 250 mAdc, V
= 200 mAdc, V
= 60 Vdc, I
= 5.0 Vdc, I
= 10 Vdc, I
1.0
T
J
= 125°C
C
E
E
B
E
C
CE
= 0)
B
= 0)
CE
CE
= 0, f = 1.0 MHz)
CE
= 0)
= 0)
= 0)
= 10 mAdc)
= 1.0 Vdc)
25°C
= 1.0 Vdc)
= 1.0 Vdc)
= 5.0 Vdc, f = 20 MHz)
2.0
Characteristic
−55°C
3.0
(T
A
= 25°C unless otherwise noted)
5.0
7.0
Figure 1. DC Current Gain
I
http://onsemi.com
C
, COLLECTOR CURRENT (mA)
10
MPS6717
2
20
30
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(on)
h
C
CBO
EBO
h
50
FE
cb
fe
70
100
Min
5.0
2.5
80
80
80
50
−
−
−
−
−
Max
200
250
0.1
0.5
1.2
10
30
25
V
−
−
−
−
CE
= 1.0 V
300
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−
−
500