MJE200G ON Semiconductor, MJE200G Datasheet
MJE200G
Specifications of MJE200G
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MJE200G Summary of contents
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... Adc 0.12 mW/ 0.012 mW/ –65 to +150 J stg MJE200 MJE200G Symbol Max Unit q _C/W 8. _C/W MJE210 83.4 JC MJE210G MJE210T MJE210TG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON ...
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ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
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MJE200 - NPN + 9.0 V ≤ DUTY CYCLE = 1.0% R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C ...
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MJE200 - NPN, 10 7.0 1.0 ms 5.0 3.0 dc 5 150°C 1.0 J BONDING WIRE LIMITED 0.7 THERMALLY LIMITED @ T = 25°C 0.5 C (SINGLE PULSE) 0.3 SECOND BREAKDOWN LIMITED CURVES APPLY BELOW 0.2 ...
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MJE200 - NPN, NPN MJE200 400 T = 150°C J 25°C 200 - 55°C 100 1 2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 COLLECTOR ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...