NSS20101JT1G ON Semiconductor, NSS20101JT1G Datasheet - Page 3

• Manufacturer Part Number: NSS20101JT1G
• Description: TRANS NPN 20V 1A SC-89
• Manufacturer: ON Semiconductor

Specifications of NSS20101JT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 220mV @ 100mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 100mA, 2V
• Power - Max: 300mW
• Frequency - Transition: 350MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

600
500
400
300
200
100
0.001
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0
0.1
0.001
0.001
1
Figure 5. Collector−Emitter Saturation Voltage
0.001
I
C
Figure 7. Base−Emitter Saturation Voltage
I
/I
C
B
/I
B
= 50
= 20
0.01
0.01
I
I
Figure 3. DC Current Gain
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
0.01
I
150°C
−55°C
C
150°C
25°C
−55°C
25°C
, COLLECTOR CURRENT (A)
0.1
0.1
0.1
25°C
TYPICAL CHARACTERISTICS
150°C
1
1
1
V
CE
−55°C
http://onsemi.com
= 4 V
10
10
10
3
0.001
0.01
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1
0.001
0.001
0.001
Figure 4. Collector−Emitter Saturation Voltage
−55°C
25°C
150°C
V
I
C
Figure 6. Base−Emitter Saturation Voltage
CE
/I
B
= 2 V
= 10
Figure 8. Base−Emitter Voltage
0.01
0.01
0.01
I
I
I
C
C
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
−55°C
25°C
150°C
0.1
0.1
25°C
0.1
150°C
1
1
1
−55°C
I
C
/I
B
= 10
10
10
10