NSS20101JT1G ON Semiconductor, NSS20101JT1G Datasheet

NSS20101JT1G

Manufacturer Part Number

NSS20101JT1G

Description

TRANS NPN 20V 1A SC-89

Manufacturer

ON Semiconductor

Datasheet

1.NSS20101JT1G.pdf (5 pages)

Specifications of NSS20101JT1G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

20V

Vce Saturation (max) @ Ib, Ic

220mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

200 @ 100mA, 2V

Power - Max

300mW

Frequency - Transition

350MHz

Mounting Type

Surface Mount

Package / Case

SC-62, SOT-89, TO-243 (3 Leads + Tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSS20101JT1G

Manufacturer:

Quantity:

30 000

Company:

H&T Electronics

Part Number:

NSS20101JT1G

Quantity:

2 300

Company:

H&T Electronics

Part Number:

NSS20101JT1G

Quantity:

567

Company:

H&T Electronics

Part Number:

NSS20101JT1G

Quantity:

30 000

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NSS20101J

20 V, 1.0 A, Low V

NPN Transistor

transistors are miniature surface mount devices featuring ultra low

saturation voltage (V

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ 100 mm

2. FR−4 @ 500 mm

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

September, 2008 − Rev. 0

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current − Continuous

Collector Current − Peak

Electrostatic Discharge

Total Device Dissipation

Thermal Resistance,

Total Device Dissipation

Thermal Resistance,

Junction and Storage

ON Semiconductor’s e

Typical applications are DC−DC converters and power management

This is a Pb−Free Device

Derate above 25°C

Junction−to−Ambient

Derate above 25°C

Junction−to−Ambient

Temperature Range

= 25°C

Characteristic

Rating

, 1 oz. copper traces.

CE(sat)

= 25°C)

) and high current gain capability. These

PowerEdge family of low V

qJA

Symbol

(Note 1)

(Note 2)

ESD

(Note 1)

(Note 2)

CEO

CBO

EBO

, T

stg

PowerEdge devices to be

CE(sat)

−55 to

+150

Max

HBM Class 3B

Max

255

490

300

415

6.0

1.0

2.0

2.4

MM Class C

mW/°C

°C/W

Unit

Vdc

CE(sat)

°C

†For information on tape and reel specifications,

NSS20101JT1G

NPN LOW V

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*Date Code orientation may vary depending

upon manufacturing location.

(Note: Microdot may be in either location)

Device

CASE 463C

20 VOLTS, 1.0 AMPS

ORDERING INFORMATION

SC−89

http://onsemi.com

BASE

= Specific Device Code

= Date Code*

= Pb−Free Package

CE(sat)

(Pb−Free)

Package

SC−89

COLLECTOR

MARKING DIAGRAM

& PIN ASSIGNMENT

EMITTER

Publication Order Number:

TRANSISTOR

Base

Collector

xx M G

3000/Tape & Reel

Shipping

Emitter

NSS20101J/D

†

Related parts for NSS20101JT1G

NSS20101JT1G Summary of contents

Page 1

... Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSS20101JT1G SC−89 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mAdc Collector −Base Breakdown Voltage (I = 0.1 mAdc Emitter −Base Breakdown Voltage (I = 0.1 mAdc, I ...

Page 3

I , COLLECTOR CURRENT (A) C Figure 3. DC Current Gain 25°C 0.1 0.01 0.001 0.001 0.01 0 ...

Page 4

0.01 0.0001 0.001 0. BASE CURRENT (A) B Figure 9. Saturation Region ...

Page 5

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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