BC 847B E6433 Infineon Technologies, BC 847B E6433 Datasheet - Page 6

• Manufacturer Part Number: BC 847B E6433
• Description: TRANSISTOR NPN AF 45V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 847B E6433

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 330mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Maximum Operating Frequency: 250 MHz
• Collector- Emitter Voltage Vceo Max: 45 V
• Continuous Collector Current: 0.1 A
• Power Dissipation: 330 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BC847BE6433XT; SP000010576

h
Ι
DC current gain h
V
Base-emitter saturation voltage
I
C
C
FE
CE
10
= ƒ(V
mA
10
10
10
10
10
10
10
5
5
-1
5
5
5
= 5 V
2
1
0
3
2
1
0
10
0
100
-2
-50
BEsat
25
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50 C
FE
= 20
C
C
5
= ƒ(I
10
0.6
0
C
)
0.8
5
10
1
EHP00365
Ι
V
EHP00364
mA
V
C
BEsat
10
1.2
2
6
Ι
Collector-emitter saturation voltage
I
Collector cutoff current I
V
Ι
C
CB0
C
CB
10
= ƒ(V
mA
10
10
10
nA
10
10
10
10
10
5
5
-1
= 30 V
5
5
5
1
0
2
1
4
3
2
0
0
0
CEsat
0.1
), h
FE
50
-50
100
25
= 20
0.2
BC846...-BC850...
C
C
C
CBO
0.3
100
= ƒ(T
2010-06-28
max
0.4
typ
˚C
EHP00415
EHP00367
T
V
A
A
CEsat
)
V
150
0.5