2SA1163GRT5LFT Toshiba, 2SA1163GRT5LFT Datasheet
2SA1163GRT5LFT
Manufacturer Part Number
2SA1163GRT5LFT
Description
TRANS PNP 120V 100MA SC-59
Manufacturer
Toshiba
Datasheet
1.2SA1163GRT5LFT.pdf
(4 pages)
Specifications of 2SA1163GRT5LFT
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
120V
Vce Saturation (max) @ Ib, Ic
300mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
150mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Audio Frequency General Purpose Amplifier Applications
•
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Marking
High voltage: V
Excellent h
High h
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
( ) marking symbol
FE:
FE
Characteristics
Characteristics
h
classification GR (G): 200~400, BL (L): 350~700
FE
FE
linearity: h
= 200~700
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −120 V
= 0.95 (typ.)
FE
(I
C
(Ta = 25°C)
= −0.1 mA)/h
(Ta = 25°C)
V
Symbol
Symbol
V
V
V
CE (sat)
I
I
T
CBO
EBO
h
C
P
NF
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SA1163
j
(Note)
FE
V
V
V
I
V
V
V
Rg = 10 kΩ,
C
CB
EB
CE
CE
CB
CE
(I
= −10 mA, I
−55~125
C
Rating
= −120 V, I
= −5 V, I
= −6 V, I
= −6 V, I
= −10 V, I
= −6 V, I
−120
−120
−100
−20
150
125
= −2 mA)
−5
1
Test Condition
C
C
C
C
B
E
= 0
= −2 mA
= −1 mA
= −0.1 mA, f = 1 kHz,
E
= −1 mA
= 0, f = 1 MHz
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
200
Min
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
100
1.0
⎯
⎯
⎯
⎯
4
TO-236MOD
2-3F1A
SC-59
2007-11-01
−0.1
−0.1
−0.3
2SA1163
Max
700
10
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
dB
V
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2SA1163GRT5LFT Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
Page 2
2 2SA1163 2007-11-01 ...
Page 3
3 2SA1163 2007-11-01 ...
Page 4
... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...