BCW71,215 NXP Semiconductors, BCW71,215 Datasheet - Page 3
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BCW71,215
Manufacturer Part Number
BCW71,215
Description
TRANSISTOR NPN 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BCW71215.pdf
(6 pages)
Specifications of BCW71,215
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
210mV @ 2.5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
110 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933149390215
BCW71 T/R
BCW71 T/R
BCW71 T/R
BCW71 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BCW71,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 19
R
I
I
h
V
V
V
C
f
F
SYMBOL
SYMBOL
j
CBO
EBO
T
FE
= 25 °C unless otherwise specified.
CEsat
BEsat
BE
NPN general purpose transistors
th j-a
c
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
BCW71
BCW72
BCW71
BCW72
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= I
= 0; V
= 10 μA; V
= 2 mA; V
= 10 mA; I
= 50 mA; I
= 10 mA; I
= 50 mA; I
= 2 mA; V
= 10 mA; V
= 200 μA; V
e
= 0; V
CB
CB
EB
= 20 V
= 20 V; T
= 5 V
CONDITIONS
note 1
3
CE
CE
CB
B
B
B
B
CE
CE
CE
= 0.5 mA
= 2.5 mA
= 0.5 mA
= 2.5 mA
= 5 V
= 5 V
= 10 V; f = 1 MHz
= 5 V
= 5 V; f = 100 MHz
= 5 V; R
CONDITIONS
j
= 100 °C
S
= 2 kΩ;
−
−
−
−
−
110
200
−
−
−
−
550
−
100
−
MIN.
VALUE
BCW71; BCW72
500
−
−
−
90
150
−
−
120
210
750
850
−
2.5
−
−
TYP.
Product data sheet
100
10
100
−
−
220
450
250
−
−
−
700
−
−
10
MAX.
UNIT
K/W
nA
μA
μA
mV
mV
mV
mV
mV
pF
MHz
dB
UNIT