BC817-40W,115 NXP Semiconductors, BC817-40W,115 Datasheet - Page 4
![TRANSISTOR NPN 500MA 45V SOT323](/photos/5/24/52427/568-umt3_sot-323_sc-70_sot323_sml.jpg)
BC817-40W,115
Manufacturer Part Number
BC817-40W,115
Description
TRANSISTOR NPN 500MA 45V SOT323
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.BC817-16W115.pdf
(19 pages)
Specifications of BC817-40W,115
Package / Case
SC-70-3, SOT-323-3
Mounting Type
Surface Mount
Power - Max
200mW
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
NPN
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
250 @ 100mA, 1V
Vce Saturation (max) @ Ib, Ic
700mV @ 50mA, 500mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Power Dissipation
200 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934021940115::BC817-40W T/R::BC817-40W T/R
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BC817_BC817W_BC337_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
[1]
[2]
Symbol
V
V
V
I
I
I
P
T
T
T
Symbol
R
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th(j-a)
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
Valid for all available selection groups.
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
BC817
BC817W
BC337
BC817
BC817W
BC337
Rev. 06 — 17 November 2009
BC817; BC817W; BC337
Conditions
open emitter
open base;
I
open collector
T
T
T
Conditions
T
T
T
C
amb
amb
amb
amb
amb
amb
45 V, 500 mA NPN general-purpose transistors
= 10 mA
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
≤ 25 °C
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
-
-
−65
-
−65
Min
-
-
-
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
50
45
5
500
1
200
250
200
625
+150
150
+150
Max
500
625
200
Unit
V
V
V
mA
A
mA
mW
mW
mW
°C
°C
°C
Unit
K/W
K/W
K/W
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