KSP44TF Fairchild Semiconductor, KSP44TF Datasheet - Page 2
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KSP44TF
Manufacturer Part Number
KSP44TF
Description
TRANSISTOR NPN 400V 300MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSP44TA.pdf
(5 pages)
Specifications of KSP44TF
Transistor Type
NPN
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
750mV @ 5mA, 50mA
Current - Collector Cutoff (max)
500nA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 10V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.3 A
Maximum Dc Collector Current
0.3 A
Power Dissipation
625 mW
Dc Collector/base Gain Hfe Min
50
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSP44TF
Manufacturer:
FSC
Quantity:
3 000
Company:
Part Number:
KSP44TF
Manufacturer:
Fairchild Semiconductor
Quantity:
91 906
Part Number:
KSP44TF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Typical Characteristics
160
140
120
100
-20
-40
80
60
40
20
100
1.0
0.8
0.6
0.4
0.2
0.0
0
0.1
10
1
1
0.1
1
Figure 3. Turn-Off Switching Times
T
a
=25℃
Figure 1. DC current Gain
V
CE
I
Figure 5. On Voltage
(sat)@I
C
I
I
10
[mA], COLLECTOR CURRENT
C
C
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
1
C
/I
B
V
=10
V
BE
BE
(sat) @I
(on) @V
100
10
10
C
CE
/I
B
=10V
=10
1000
100
V
I
T
V
C
CC
a
/I
CE
=25℃
B
ts
tf
=150V
=10V
=10
10000
1000
100
0.1
1000
10
0.5
0.4
0.3
0.2
0.1
0.0
100
1
10
Figure 6. Collector Saturation Region
1
1
10
0.1
Figure 2. Turn-On Switching Times
I
C
=1mA
C
Cob
ib
V
Figure 4. Capacitance
CB
I
I
C
C
[V], COLLECTOR-BASE VOLTAGE
100
[mA], COLLECTOR CURRENT
[mA], COLLECTOR CURRENT
1
I
C
=10mA
1000
10
10
I
C
=50mA
tf
td
10000
100
V
I
T
V
C
a
CC
/I
BE
=25 ℃
B
=150V
(off)=4V
=10
T
f=1MHz
T
Rev. A2, November 2002
a
a
=25℃
=25℃
100000
100
1000