2N6667G ON Semiconductor, 2N6667G Datasheet
2N6667G
Manufacturer Part Number
2N6667G
Description
TRANS DARL PNP 10A 60V TO220AB
Manufacturer
ON Semiconductor
Datasheet
1.2N6667G.pdf
(6 pages)
Specifications of 2N6667G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
3V @ 100mA, 10A
Current - Collector Cutoff (max)
1mA
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 5A, 3V
Power - Max
2W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
10A
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
10 A
Maximum Collector Cut-off Current
1000 uA
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
10 A
Dc Collector/base Gain Hfe Min
1000
Minimum Operating Temperature
- 65 C
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation Pd
2W
Dc Collector Current
-10A
Dc Current Gain Hfe
20
Operating Temperature Range
-65°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
2N6667GOS
2N6667, 2N6668
Darlington Silicon
Power Transistors
applications.
•
•
•
•
•
•
•
*For additional information on our Pb-Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Designed for general-purpose amplifier and low speed switching
High DC Current Gain -
Collector-Emitter Sustaining Voltage - @ 200 mAdc
Low Collector-Emitter Saturation Voltage -
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
TO-220AB Compact Package
Complementary to 2N6387, 2N6388
Pb-Free Packages are Available*
h
V
V
FE
CE(sat)
CEO(sus)
BASE
= 3500 (Typ) @ I
= 2.0 Vdc (Max)@ I
Figure 1. Darlington Schematic
= 60 Vdc (Min) - 2N6667
= 80 Vdc (Min) - 2N6668
≈ 8 k
C
= 4.0 Adc
≈ 120
COLLECTOR
EMITTER
C
= 5.0 Adc
1
2N6667
2N6667G
2N6668
2N6668G
1
Device
2
3
POWER TRANSISTORS
CASE 221A-09
ORDERING INFORMATION
10 A, 60-80 V, 65 W
TO-220AB
x
A
Y
WW = Work Week
G
STYLE 1:
DARLINGTON
http://onsemi.com
PNP SILICON
PIN 1. BASE
= 7 or 8
= Assembly Location
= Year
= Pb-Free Package
4
TO-220AB
TO-220AB
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Package
Publication Order Number:
MARKING
DIAGRAM
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
AYWWG
2N666x
Shipping
2N6667/D
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2N6667G Summary of contents
Page 1
... EMITTER 2 4. COLLECTOR 3 CASE 221A-09 TO-220AB Assembly Location Y = Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device Package 2N6667 TO-220AB 2N6667G TO-220AB (Pb-Free) 2N6668 TO-220AB 2N6668G TO-220AB (Pb-Free) 1 MARKING DIAGRAM 2N666x AYWWG Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail Publication Order Number: 2N6667/D ...
Page 2
MAXIMUM RATINGS (Note 1) Î Î Î ...
Page 3
R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPES e.g 100 mA 1N5825 USED ABOVE 100 mA MSD6100 USED BELOW I B FOR t AND t ...
Page 4
T = 150°C J 0.3 0.2 BONDING WIRE LIMIT 0.1 THERMAL LIMIT @ T = 25°C C SECOND BREAKDOWN LIMIT 0.05 CURVES APPLY BELOW RATED V 0.03 0. ...
Page 5
T = 25° 250 BE(sat 1 CE(sat) C 0.5 0.1 0.2 0.3 0.5 0 ...
Page 6
... PLANE American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED ...