NSBA114EDP6T5G ON Semiconductor, NSBA114EDP6T5G Datasheet - Page 4
NSBA114EDP6T5G
Manufacturer Part Number
NSBA114EDP6T5G
Description
TRANS BRT PNP DUAL DGTL SOT-963
Manufacturer
ON Semiconductor
Datasheet
1.NSBA114EDP6T5G.pdf
(6 pages)
Specifications of NSBA114EDP6T5G
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
35 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
338mW
Mounting Type
Surface Mount
Package / Case
SOT-963
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSBA114EDP6T5G
Manufacturer:
ON Semiconductor
Quantity:
12 800
Company:
Part Number:
NSBA114EDP6T5G
Manufacturer:
ON
Quantity:
30 000
ELECTRICAL CHARACTERISTICS
Input Resistor
Resistor Ratio
NSBA114EDP6T5G/NSBA124EDP6T5G
NSBA144EDP6T5G/NSBA143EDP6T5G
NSBA114YDP6T5G
NSBA123TDP6T5G/NSBA114TDP6T5G/
NSBA115TDP6T5G
NSBA143ZDP6T5G
NSBA123JDP6T5G
NSBA144WDP6T5G
Characteristic
(T
A
= 25°C unless otherwise noted) (Continued)
NSBA114TDP6T5G
NSBA114EDP6T5G
NSBA124EDP6T5G
NSBA144EDP6T5G
NSBA114YDP6T5G
NSBA123TDP6T5G
NSBA143EDP6T5G
NSBA143ZDP6T5G
NSBA123JDP6T5G
NSBA144WDP6T5G
NSBA115TDP6T5G
http://onsemi.com
4
Symbol
R
R1
1
/R
2
0.055
0.038
15.4
32.9
1.54
32.9
0.17
Min
7.0
7.0
7.0
1.5
3.3
3.3
0.8
1.7
70
−
0.047
0.21
Typ
100
2.2
4.7
4.7
2.2
1.0
0.1
2.1
10
10
22
47
10
47
−
0.185
0.056
Max
28.6
61.1
2.86
61.1
0.25
130
2.9
6.1
6.1
1.2
2.6
13
13
13
−
Unit
kW