MUN5216DW1T1G ON Semiconductor, MUN5216DW1T1G Datasheet - Page 4

• Manufacturer Part Number: MUN5216DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5216DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Continuous Collector Current Ic: 100mA
• Base Input Resistor R1: 4.7kohm
• No. Of Pins: 6
• Power Dissipation Pd: 187mW
• Transistor Polarity: NPN
• Rohs Compliant: Yes
• Rf Transistor Case: SOT-363
• Dc Collector Current: 100mA
• Dc Current Gain Min (hfe): 160
• Continuous Collector Current Max: 100mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
(V
(I
(I
(I
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 5.5 V, R
= 4.0 V, R
L
L
L
L
Characteristic
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted, common for Q
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
MUN5211DW1T1G
MUN5212DW1T1G
MUN5213DW1T1G
MUN5214DW1T1G
MUN5235DW1T1G
MUN5236DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5237DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5211DW1T1G
MUN5212DW1T1G
MUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G
MUN5230DW1T1G
MUN5231DW1T1G
MUN5232DW1T1G
MUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G
MUN5213DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G
http://onsemi.com
4
Symbol
V
CE(sat)
V
h
FE
OL
1
and Q
Min
160
160
3.0
8.0
35
60
80
80
15
80
80
80
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2
)
Typ
100
140
140
350
350
200
150
140
150
140
5.0
60
15
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Vdc
Vdc