SI8234AB-C-IS1 Silicon Laboratories Inc, SI8234AB-C-IS1 Datasheet - Page 6
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SI8234AB-C-IS1
Manufacturer Part Number
SI8234AB-C-IS1
Description
2.5KV 4A HIGH SIDE/LOW SIDE ISOLATED DRIVER ("ISODRIVER"), P
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI8234BB-C-IS1.pdf
(52 pages)
Specifications of SI8234AB-C-IS1
Configuration
High and Low Side, Independent
Input Type
PWM
Delay Time
60ns
Current - Peak
4A
Number Of Configurations
2
Number Of Outputs
4
High Side Voltage - Max (bootstrap)
1500V
Voltage - Supply
6.5 V ~ 24 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
6
Parameter
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
Input Supply Quiescent
Current
Output Supply Quiescent
Current
Input Supply Active Current
Output Supply Active Current
Input Pin Leakage Current
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
Logic Low Output Voltage
Output Short-Circuit Pulsed
Sink Current
Output Short-Circuit Pulsed
Source Current
Output Sink Resistance
Output Source Resistance
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
VDDA, VDDB
VOAL, VOBL
R
IOA(SCH),
IVIA, IVIB,
IDISABLE
IOA(SCL),
IOB(SCH)
ON(SOURCE)
IOB(SCL)
R
IDDA(Q),
IDDB(Q)
Symbol
IDDI(Q)
VOAH,
VI
VOBH
ON(SINK)
IPWM
IDDO
VDDI
IDDI
VIH
VIL
HYST
1
GNDA, and VDDB and GNDB
Voltage between VDDA and
(See “6. Ordering Guide” )
Si8233/4/5/6, Figure 4
Si8233/4/5/6, Figure 5
PWM freq = 500 kHz
PWM freq = 500 kHz
Si8230/1/2, Figure 4
Si8230/1/2, Figure 5
Current per channel
Si8230/32/33/35/36
Rev. 1.1
IOA, IOB = –1 mA
Test Conditions
IOA, IOB = 1 mA
Si8233/4/5/6
Si8233/4/5/6
Si8230/1/2
Si8230/1/2
Si8231/34
/VDDB)
— 0.04
(VDDA
Min
–10
–10
400
4.5
6.5
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Typ
450
2.5
3.6
0.5
4.0
2.0
5.0
1.0
2.7
—
—
—
—
—
—
15
—
—
—
2
2
Max
0.04
+10
+10
5.5
3.0
0.8
24
—
—
—
—
—
—
—
—
—
—
—
—
—
3
3
Units
µA dc
µA dc
mA
mA
mA
mA
mA
mV
V
V
V
V
V
V
A