BC857CDW1T1G ON Semiconductor, BC857CDW1T1G Datasheet - Page 4
![TRANS PNP DUAL 45V 100MA SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
BC857CDW1T1G
Manufacturer Part Number
BC857CDW1T1G
Description
TRANS PNP DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.BC856BDW1T1G.pdf
(6 pages)
Specifications of BC857CDW1T1G
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC857CDW1T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
BC857CDW1T1G
Manufacturer:
INF
Quantity:
5 694
Part Number:
BC857CDW1T1G
Manufacturer:
LRC/乐山
Quantity:
20 000
-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.5
1.0
0.7
0.5
0.3
0.2
7.0
5.0
3.0
2.0
1.0
10
0
-0.4
-0.2
I
-10 mA
-0.02
-0.6
C
V
T
=
A
CE
-0.5 -1.0
Figure 7. Normalized DC Current Gain
Figure 9. Collector Saturation Region
= 25°C
= -10 V
-1.0
I
C
V
Figure 11. Capacitances
-0.1
I
, COLLECTOR CURRENT (mAdc)
C
R
, REVERSE VOLTAGE (VOLTS)
-2.0
= -20 mA
-2.0
I
B
, BASE CURRENT (mA)
-5.0 -10
I
C
-4.0 -6.0
C
= -50 mA
ib
TYPICAL CHARACTERISTICS − BC857/BC858
C
-1.0
ob
-20
T
-10
A
= 25°C
T
I
C
I
A
C
= -200 mA
= 25°C
-50 -100 -200
= -100 mA
-20 -30 -40
http://onsemi.com
-10
-20
4
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
400
300
200
150
100
1.0
1.2
1.6
2.0
2.4
2.8
80
60
40
30
20
0
-0.5
-0.1 -0.2
Figure 12. Current−Gain − Bandwidth Product
T
A
-0.2
Figure 8. “Saturation” and “On” Voltages
= 25°C
-55°C to +125°C
Figure 10. Base−Emitter Temperature
-1.0
-0.5 -1.0
I
I
C
C
I
-2.0 -3.0
, COLLECTOR CURRENT (mAdc)
C
, COLLECTOR CURRENT (mAdc)
, COLLECTOR CURRENT (mA)
V
-1.0
V
V
BE(on)
CE(sat)
BE(sat)
Coefficient
@ V
-2.0
@ I
@ I
-5.0
CE
C
C
/I
/I
B
= -10 V
B
= 10
-5.0
= 10
-10
-10
-10
-20
-20
V
T
A
CE
= 25°C
= -10 V
-30
-50 -100
-100
-50