BC857CDW1T1G ON Semiconductor, BC857CDW1T1G Datasheet - Page 3
![TRANS PNP DUAL 45V 100MA SOT-363](/photos/1/38/13878/sc-70-6_sc-88_sot-363_419b___02_sml.jpg)
BC857CDW1T1G
Manufacturer Part Number
BC857CDW1T1G
Description
TRANS PNP DUAL 45V 100MA SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.BC856BDW1T1G.pdf
(6 pages)
Specifications of BC857CDW1T1G
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
380mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
- 0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
380 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
420 at 2 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC857CDW1T1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
BC857CDW1T1G
Manufacturer:
INF
Quantity:
5 694
Part Number:
BC857CDW1T1G
Manufacturer:
LRC/乐山
Quantity:
20 000
-2.0
-1.6
-1.2
-0.8
-0.4
2.0
1.0
0.5
0.2
8.0
6.0
4.0
2.0
40
20
10
-0.1
0
-0.02
-0.1 -0.2
T
-10 mA
-0.2
J
I
V
T
C
= 25°C
A
-0.05
CE
=
Figure 3. Collector Saturation Region
= 25°C
= -5.0 V
-0.5
-0.1
-1.0
Figure 1. DC Current Gain
V
I
C
R
Figure 5. Capacitance
, COLLECTOR CURRENT (mA)
-2.0 -5.0
-20 mA
, REVERSE VOLTAGE (VOLTS)
-0.2
-1.0
I
B
, BASE CURRENT (mA)
-2.0
-0.5
C
ib
-10
-50 mA
-5.0
-1.0
-20
C
ob
TYPICAL CHARACTERISTICS − BC856
-2.0
-50 -100
-10
-100 mA
-20
T
-5.0
J
-200
= 25°C
-200 mA
-50
-10
http://onsemi.com
-100
-20
3
-1.0
-0.8
-0.6
-1.0
-1.4
-1.8
-2.6
-3.0
-2.2
-0.4
-0.2
500
200
100
50
20
0
-0.2
-0.2
Figure 4. Base−Emitter Temperature Coefficient
Figure 6. Current−Gain − Bandwidth Product
V
CE
T
-0.5
-0.5
J
q
= -5.0 V
V
= 25°C
V
V
VB
BE
CE(sat)
BE(sat)
for V
@ V
-1.0
-1.0
-1.0
@ I
BE
CE
@ I
I
I
I
C
Figure 2. “On” Voltage
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
-2.0
C
= -5.0 V
-2.0
C
/I
/I
B
B
= 10
= 10
-5.0
-5.0
-10
-10
-10
-55°C to 125°C
-20
-20
-100
-50 -100
-50 -100
-200
-200