FFB3946 Fairchild Semiconductor, FFB3946 Datasheet
FFB3946
Manufacturer Part Number
FFB3946
Description
TRANSISTOR NPN/PNP 40V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FFB3946.pdf
(3 pages)
Specifications of FFB3946
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
300mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Transistor Polarity
NPN/PNP
Number Of Elements
2
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
100
Power Dissipation
300mW
Frequency (max)
200MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FFB3946
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
Symbol
Symbol
C
J
CEO
CBO
EBO
D
*
Thermal Characteristics
NPN & PNP General Purpose Amplifier
Absolute Maximum Ratings*
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
JA
This complementary device is designed for use as a general purpose
amplifier and switch The useful dynamic range extends to 100 mA as a
switch and 100 MHz as an amplifier. Sourced from Process 23 and 66.
See FFB3904 (NPN) and FFB3906 (PNP) for characteristics.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Dot denotes pin #1
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Mark: .AB
SC70-6
Derate above 25 C
FFB3946
C1
B2
E2
pin #1
Characteristic
E1
Parameter
B1
C2
T
A
= 25°C unless otherwise noted
T
C1 B1 E1
C2 B2 E2
TRANSISTOR TYPE
A
= 25°C unless otherwise noted
SuperSOT -6
NPN
PNP
Dot denotes pin #1
Mark: .002
FFB3946
FMB3946
C1
300
415
2.4
E1
Max
C2
-55 to +150
pin #1
Value
200
5.0
FMB3946
40
40
B1
700
180
5.6
E2
B2
Units
mW/ C
Units
mA
mW
V
V
V
C/W
C
4
Related parts for FFB3946
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FFB3946 Summary of contents
Page 1
... Thermal Resistance, Junction to Ambient R JA 1999 Fairchild Semiconductor Corporation FMB3946 TRANSISTOR TYPE NPN PNP SuperSOT -6 Mark: .002 Dot denotes pin # 25°C unless otherwise noted A Parameter T = 25°C unless otherwise noted A FFB3946 pin #1 Value Units 5.0 V 200 mA -55 to +150 C Max Units FMB3946 300 700 mW 2 ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CBO I Emitter Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...