UMT1NTN Rohm Semiconductor, UMT1NTN Datasheet - Page 3
![TRANS DUAL PNP 50V 150MA SOT-363](/photos/5/43/54322/umt6_sml.jpg)
UMT1NTN
Manufacturer Part Number
UMT1NTN
Description
TRANS DUAL PNP 50V 150MA SOT-363
Manufacturer
Rohm Semiconductor
Specifications of UMT1NTN
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
150mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-50V
Gain Bandwidth Ft Typ
140MHz
Power Dissipation Pd
150mW
Dc Collector Current
-150mA
Operating Temperature
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 6 V
Continuous Collector Current
- 150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
150 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
140 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
UMT1NTNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMT1NTN
Manufacturer:
RICOH
Quantity:
870
Company:
Part Number:
UMT1NTN
Manufacturer:
NXP
Quantity:
12 000
Part Number:
UMT1NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Fig.7 Collector-emitter saturation
-0.05
-0.5
-0.2
-0.1
-1
-0.2
voltage vs. collector current ( ΙΙ )
-0.5
COLLECTOR CURRENT : I
Ta = 100°C
-1
-40°C
-2
25°C
-5
-10 -20
C
l
(mA)
C
/l
B
-50 -100
= 10
1000
Fig.8 Gain bandwidth product vs.
500
200
100
50
0.5
emitter current
1
EMITTER CURRENT : I
2
5
10
20
E
Ta = 25 °C
V
(mA)
CE
= - 12V
50
100
EMT1 / UMT1N / IMT1A
Fig.9
20
10
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
Collector output capacitance vs.
Emitter input capacitance vs.
emitter-base voltage
collector-base voltage
-0.5
-1
Rev.A
-2
-5
-10
Ta = 25 °C
f = 1MHz
I
I
: V
E
C
= 0A
= 0A
EB
CB
-20
(V)
(V)
3/3