MCR218−2, MCR218−4,
MCR218−6
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
November, 2005 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
On-State RMS Current
(180 Conduction Angles; T
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
Forward Average Gate Power
(t = 8.3 ms, T
Forward Peak Gate Current
(Pulse Width
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for half-wave ac control applications, such as
Dissipation and Durability
Glass-Passivated Junctions
Blocking Voltage to 400 Volts
TO-220 Construction − Low Thermal Resistance, High Heat
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2005
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
J
DRM
= *40 to 125 C, Gate Open)
and V
C
RRM
1.0 ms, T
= 70 C)
1.0 ms, T
Rating
for all types can be applied on a continuous basis. Ratings
(T
C
C
J
= 70 C)
= 70 C)
= 25 C unless otherwise noted)
C
Preferred Device
= 70 C)
MCR218−2
MCR218−4
MCR218−6
J
= 125 C)
Symbol
I
P
V
V
T(RMS)
I
P
I
T
TSM
G(AV)
DRM,
RRM
I
GM
T
GM
stg
2
J
t
−40 to +125
−40 to +150
Value
200
400
100
8.0
5.0
0.5
2.0
50
26
1
Unit
A
W
W
V
A
A
A
C
C
2
s
Preferred devices are recommended choices for future use
and best overall value.
MCR218−2
MCR218−2G
MCR218−4
MCR218−4G
MCR218−6
MCR218−6G
Device
1
2
3
A
Y
WW
MCR218x = Device Code
G
AKA
ORDERING INFORMATION
50 thru 400 VOLTS
8 AMPERES RMS
A
CASE 221A−07
http://onsemi.com
TO−220AB
STYLE 3
4
(Pb−Free)
(Pb−Free)
(Pb−Free)
TO220AB
TO220AB
TO220AB
TO220AB
TO220AB
TO220AB
Package
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Diode Polarity
SCRs
x = 2, 4 or 6
Publication Order Number:
G
MCR218x−G
MARKING
DIAGRAM
AY
500 Units/Bulk
500 Units/Bulk
500 Units/Bulk
500 Units/Bulk
500 Units/Bulk
500 Units/Bulk
C
AKA
Shipping
MCR218/D
WW