BLF1822-10,112 NXP Semiconductors, BLF1822-10,112 Datasheet - Page 4

• Manufacturer Part Number: BLF1822-10,112
• Description: TRANSISTOR UHF PWR LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF1822-10,112

• Transistor Type: LDMOS
• Frequency: 2.2GHz
• Gain: 11dB
• Voltage - Rated: 65V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Package / Case: SOT467C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 2.2A
• Drain Source Voltage (max): 65V
• Output Power (max): 10W
• Power Gain (typ)@vds: 18.5@26VdB
• Frequency (max): 2.2GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 0.5S
• Drain Source Resistance (max): 1200(Typ)@10Vmohm
• Input Capacitance (typ)@vds: 13@26VpF
• Output Capacitance (typ)@vds: 11@26VpF
• Reverse Capacitance (typ): 0.5@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 39%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934056582112

Philips Semiconductors
APPLICATION INFORMATION 2.2 GHz
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF1822-10 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Feb 10
handbook, halfpage
CW, class-AB (2-tone)
MODE OF OPERATION
UHF power LDMOS transistor
V
Fig.2
(pF)
GS
C
10
10
= 0; f = 1 MHz.
10
1
1
2
0
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
C os
C rs
C is
10
DS
f
1
= 26 V; f = 2200 MHz at rated load power.
= 2200; f
20
(MHz)
f
V DS (V)
2
= 2200.1
MGW642
30
V
(V)
26
h
DS
= 25 C; R
4
handbook, halfpage
V
f
Fig.3
1
(mA)
DS
= 2000 MHz; f
I
85
(dB)
DQ
G p
= 26 V; I
th mb-h
15
10
5
0
0
Power gain and efficiency as functions of
peak envelope load power; typical values.
DQ
= 0.4 K/W; unless otherwise specified.
10 (PEP)
= 85 mA; T
2
(W)
P
= 2000.1 MHz.
L
4
G p
h
25 C;
(dB)
>11
G
8
p
P L (PEP) (W)
BLF1822-10
Product specification
12
>30
(%)
D
D
MGW643
16
(dBc)
60
40
20
0
(%)
d
D
im
26