MRF9045LR1 Freescale Semiconductor, MRF9045LR1 Datasheet

no-image

MRF9045LR1

Manufacturer Part Number
MRF9045LR1
Description
IC MOSFET RF N-CHAN NI-360
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF9045LR1

Transistor Type
N-Channel
Frequency
945MHz
Gain
18.8dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
350mA
Voltage - Test
28V
Power - Output
55W
Package / Case
NI-360
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF9045LR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF9045LR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 28 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 28 Volts
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — - 32 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9045LR1
MRF9045LSR1
MRF9045LR1
MRF9045LSR1
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF9045
LATERAL N - CHANNEL
MRF9045LSR1
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
RF POWER MOSFETs
945 MHz, 45 W, 28 V
MRF9045LR1
M1 (Minimum)
MRF9045LR1 MRF9045LSR1
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +65
- 0.5, + 15
MRF9045LSR1
MRF9045LR1
Value
Value
Class
0.71
125
175
150
200
1.4
1.0
NI - 360S
1
NI - 360
Rev. 11, 9/2008
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for MRF9045LR1

MRF9045LR1 Summary of contents

Page 1

... MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 360 MRF9045LR1 CASE 360C - 05, STYLE 360S MRF9045LSR1 Value Unit - 0.5, +65 Vdc - 0. Vdc 125 W 0.71 W/°C 175 +150 °C 150 °C 200 °C Value Unit 1.4 °C/W 1.0 Class 1 (Minimum) M1 (Minimum) MRF9045LR1 MRF9045LSR1 1 ...

Page 2

... GS D Forward Transconductance ( Vdc Adc Dynamic Characteristics Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz MRF9045LR1 MRF9045LSR1 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V DS(on iss ...

Page 3

... IRL = 350 mA 350 mA, η = 350 mA, IMD = 350 mA, IRL = 350 mA, P 1dB G ps η Min Typ Max 17 18.8 — — — — — 18.5 — — 41 — — — — 13 — — 55 — — 18 — — 60 — MRF9045LR1 MRF9045LSR1 Unit dB % dBc dBc ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MRF9045LR1 MRF9045LSR1 ...

Page 5

... Figure 7. Power Gain, Efficiency versus −30 −12 −32 −34 −14 −36 −38 −16 955 960 = 28 Vdc = 300 mA 525 mA 400 100 P , OUTPUT POWER (WATTS) PEP out Output Power Vdc 350 945 MHz OUTPUT POWER (WATTS) PEP out Output Power MRF9045LR1 MRF9045LSR1 100 5 ...

Page 6

... Z Z Figure 8. Series Equivalent Source and Load Impedance MRF9045LR1 MRF9045LSR1 Ω source load f = 960 MHz f = 930 MHz f = 930 MHz f = 960 MHz 350 mA PEP DD DQ out source load MHz Ω Ω 930 1.02 + j0.06 2.6 + j0.20 945 1.10 + j0.11 2.6 + j0.16 960 1 ...

Page 7

... N 0.357 0.363 9.07 9. 0.125 0.135 3.18 3.43 R 0.227 0.233 5.77 5.92 S 0.225 0.235 5.72 5.97 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF STYLE 1: PIN 1. DRAIN GATE 3. SOURCE MRF9045LR1 MRF9045LSR1 7 ...

Page 8

... MRF9045LR1 MRF9045LSR1 8 RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF9045LR1 MRF9045LSR1 9 ...

Page 10

... EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 11 Sept. 2008 • Replaced Case Outline 360C - 05, Issue E with Issue • Added Product Documentation and Revision History MRF9045LR1 MRF9045LSR1 10 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 11

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9045LR1 MRF9045LSR1 11 ...

Related keywords