BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 3
![MOSFET NCH DUAL GATE 12V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,215
Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
934002640215
BF998 T/R
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
2. Device mounted on a printed-circuit board.
1996 Aug 01
V
I
I
I
P
P
T
T
D
SYMBOL
stg
j
DS
tot
tot
Silicon N-channel dual-gate MOS-FETs
G1
G2
handbook, halfpage
(1) Ceramic substrate.
(2) Printed-circuit board.
P tot max
(mW)
200
100
Fig.3 Power derating curves; BF998.
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation; BF998
total power dissipation; BF998R up to T
storage temperature
operating junction temperature
(2)
PARAMETER
(1)
100
T amb ( C)
o
MLA198
up to T
up to T
200
amb
amb
amb
3
= 60 C; see Fig.3; note 1
= 50 C; see Fig.3; note 2
= 50 C; see Fig.4; note 1
CONDITIONS
handbook, halfpage
P tot max
(mW)
200
100
Fig.4 Power derating curve; BF998R.
0
0
65
MIN.
100
BF998; BF998R
Product specification
12
30
10
10
200
200
200
+150
150
T amb (°C)
MAX.
MGA002
V
mA
mA
mA
mW
mW
mW
C
C
200
UNIT