BF998,215 NXP Semiconductors, BF998,215 Datasheet - Page 2
![MOSFET NCH DUAL GATE 12V SOT143B](/photos/5/30/53004/568-sot-143b_sml.jpg)
BF998,215
Manufacturer Part Number
BF998,215
Description
MOSFET NCH DUAL GATE 12V SOT143B
Manufacturer
NXP Semiconductors
Datasheet
1.BF998215.pdf
(15 pages)
Specifications of BF998,215
Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
N-Channel Dual Gate
Frequency
200MHz
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
0.6dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Continuous Drain Current
0.03 A
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 6 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1973-2
934002640215
BF998 T/R
934002640215
BF998 T/R
NXP Semiconductors
FEATURES
Short channel transistor with high forward transfer
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143B or SOT143R package with
source and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
QUICK REFERENCE DATA
1996 Aug 01
V
I
P
y
C
C
F
T
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
SYMBOL
D
admittance to input capacitance ratio
such as television tuners and professional
communications equipment.
j
DS
tot
Silicon N-channel dual-gate MOS-FETs
ig1-s
rs
fs
PIN
1
2
3
4
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
SYMBOL
s, b
g
g
d
2
1
CAUTION
source
drain
gate 2
gate 1
PARAMETER
DESCRIPTION
f = 1 MHz
f = 800 MHz
2
handbook, halfpage
CONDITIONS
handbook, halfpage
Marking code: MOp.
Marking code: MOp.
Top view
Top view
Fig.2
Fig.1
4
3
2
1
Simplified outline (SOT143R)
and symbol; BF998R.
Simplified outline (SOT143B)
and symbol; BF998.
1
3
2
4
24
2.1
25
1
TYP.
BF998; BF998R
MAM039
MAM040
Product specification
12
30
200
150
g
g 1
MAX.
g 2
g 1
2
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d
s,b
d