BAR 50-02L E6327 Infineon Technologies, BAR 50-02L E6327 Datasheet - Page 5
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BAR 50-02L E6327
Manufacturer Part Number
BAR 50-02L E6327
Description
DIODE RF SGL 50V 100MA TSLP-2
Manufacturer
Infineon Technologies
Datasheet
1.BAR_50-03W_E6327.pdf
(12 pages)
Specifications of BAR 50-02L E6327
Package / Case
TSLP-2-1
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 5V, 1MHz
Resistance @ If, F
4.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
HF, VHF, UHF, SHF
Carrier Life
1.1 us
Forward Voltage Drop
1.1 V at 50 mA
Maximum Diode Capacitance
0.5 pF
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
4.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
40 Ohms at 0.5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR5002LE6327XT
SP000013603
SP000013603
Forward current I
BAR50-02L
Forward current I
BAR50-03W
mA
mA
120
100
120
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
0
15
15
30
30
45
45
F
F
60
60
= ƒ (T
= ƒ (T
75
75
S
S
90 105 120 °C
90 105 120 C°
)
)
T
TS
S
150
150
5
Forward current I
BAR50-02V
Permissible Pulse Load R
BAR50-02L
mA
mA
120
100
10
10
10
90
80
70
60
50
40
30
20
10
0
2
1
0
10
0
-6
15
10
30
-5
45
10
F
-4
60
= ƒ (T
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
75
-3
S
90 105 120 C°
)
thJS
10
-2
2009-05-13
= ƒ (t
BAR50...
°C
T
t
p
p
S
)
150
10
0