BAR 50-02L E6327 Infineon Technologies, BAR 50-02L E6327 Datasheet - Page 2

• Manufacturer Part Number: BAR 50-02L E6327
• Description: DIODE RF SGL 50V 100MA TSLP-2
• Manufacturer: Infineon Technologies

Specifications of BAR 50-02L E6327

• Package / Case: TSLP-2-1
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
• Resistance @ If, F: 4.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Frequency Range: HF, VHF, UHF, SHF
• Carrier Life: 1.1 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.5 pF
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 4.5 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR5002LE6327XT; SP000013603

Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
BAR50-02L, T
BAR50-02V, T
BAR50-03W, T
Junction temperature
Operating temperature range
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BAR50-02L
BAR50-02V
BAR50-03W
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
Forward voltage
I
1
F
Pb-containing package may be available upon special request
For calculation of R
R
= 50 mA
= 50 V
S
S
S
≤ 130°C
≤ 120°C
thJA
≤ 115°C
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
A
= 25°C, unless otherwise specified
2
Symbol
I
V
R
Symbol
V
I
P
T
T
T
Symbol
R
F
F
j
op
stg
R
tot
thJS
min.
-
-
-55 ... 125
-55 ... 150
≤ 140
Value
Value
≤ 120
Values
≤ 80
250
250
250
100
150
50
0.95
typ.
-
max.
1.1
2009-05-13
50
BAR50...
Unit
V
mA
mW
°C
Unit
K/W
Unit
nA
V