MMBD353LT1G ON Semiconductor, MMBD353LT1G Datasheet
MMBD353LT1G
Specifications of MMBD353LT1G
MMBD353LT1GOS
MMBD353LT1GOSTR
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MMBD353LT1G Summary of contents
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... MMBD352LT1G, MMBD353LT1G, MMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features • Very Low Capacitance − Less Than 1 Zero V • Low Forward Voltage − 0.5 V (Typ • ...
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... FORWARD VOLTAGE (VOLTS) F Figure 1. Forward Voltage ORDERING INFORMATION Device Marking MMBD352LT1G MMBD352LT3G MMBD353LT1G MMBD353LT3G MMBD354LT1G MMBD355LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 1.0 ...
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... CATHODE 3. ANODE *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...