NTD20N06-1G ON Semiconductor, NTD20N06-1G Datasheet - Page 3

• Manufacturer Part Number: NTD20N06-1G
• Description: MOSFET N-CH 60V 20A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20N06-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1015pF @ 25V
• Power - Max: 1.36W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.055
0.045
0.035
0.025
0.015
0.065
24
16
40
32
1.8
1.6
1.4
1.2
0.8
0.6
8
0
1
2
−50
0
0
8 V
V
V
GS
V
GS
9 V
−25
I
V
DS
D
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
= 10 V
= 10 V
= 10 A
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
Figure 3. On−Resistance versus
1
T
8
J
0
, JUNCTION TEMPERATURE (°C)
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
Temperature
2
16
T
T
T
50
J
J
J
7 V
= 100°C
= 25°C
= −55°C
75
3
24
100
125
4
32
6.5 V
4.5 V
5.5 V
6 V
5 V
http://onsemi.com
150
175
5
40
3
10000
0.065
0.055
0.045
0.035
0.025
0.015
1000
100
10
40
32
24
16
1
8
0
2.6
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
V
V
V
V
DS
GS
V
GS
T
DS
GS
J
≥ 10 V
= 15 V
3.4
10
Figure 2. Transfer Characteristics
= 100°C
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
T
I
J
D
= 25°C
, DRAIN CURRENT (AMPS)
20
4.2
and Gate Voltage
versus Voltage
16
T
T
T
T
T
T
J
J
J
J
J
J
= 150°C
= 125°C
= 100°C
= 100°C
= −55°C
= 25°C
30
T
5
J
= −55°C
24
5.8
40
32
6.6
50
7.4
40
60