NTD20N06-1G ON Semiconductor, NTD20N06-1G Datasheet
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NTD20N06-1G
Specifications of NTD20N06-1G
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NTD20N06-1G Summary of contents
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... R 2.5 qJC R 80 qJA R 110 qJA T 260 ° http://onsemi.com R TYP I MAX DS(on N−Channel MARKING DIAGRAM 4 Drain 4 DPAK CASE 369C STYLE Drain Gate Source 20N06 = Device Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD20N06/D ...
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... Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device NTD20N06G NTD20N06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) ...
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DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.065 0.055 T = ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS ...
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SINGLE PULSE T = 25° 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased ...
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... Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 6.172 0.243 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD20N06/D ...