BSS138LT3 ON Semiconductor, BSS138LT3 Datasheet - Page 4

• Manufacturer Part Number: BSS138LT3
• Description: MOSFET N-CH 50V 200MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS138LT3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

0.001
0.01
0.1
5.5
4.5
3.5
2.5
1.5
10
1
9
8
7
6
5
4
3
2
1
6
5
4
3
2
1
Figure 9. On−Resistance versus Drain Current
0
0
0
Figure 7. On−Resistance versus Drain Current
V
V
GS
GS
0.05
Figure 11. Body Diode Forward Voltage
= 2.5 V
= 4.5 V
0.2
0.05
0.1
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
0.15
I
I
D
D
T
0.4
, DRAIN CURRENT (AMPS)
, DRAIN CURRENT (AMPS)
J
= 150°C
0.2
0.1
0.25
0.6
TYPICAL ELECTRICAL CHARACTERISTICS
25°C
0.15
0.3
0.8
0.35
0.4
0.2
-55°C
1.0
-55°C
25°C
150°C
-55°C
150°C
http://onsemi.com
25°C
0.45
0.25
1.2
0.5
4
120
100
4.5
3.5
2.5
1.5
80
60
40
20
0
8
7
6
5
4
3
2
1
4
3
2
1
0
0
0
Figure 8. On−Resistance versus Drain Current
C
V
rss
0.05
GS
Figure 10. On−Resistance versus Drain
V
= 10 V
GS
0.05
0.1
5
= 2.75 V
C
C
Figure 12. Capacitance
0.15
oss
iss
I
I
D
D
, DRAIN CURRENT (AMPS)
, DRAIN CURRENT (AMPS)
0.1
10
0.2
Current
0.25
0.15
0.3
15
0.35
150°C
-55°C
25°C
20
0.2
0.4
150°C
25°C
-55°C
0.45
0.25
0.5
25